IRFL9110PBF Datasheet and Replacement
Type Designator: IRFL9110PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 94 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT223
IRFL9110PBF substitution
IRFL9110PBF Datasheet (PDF)
irfl9110pbf.pdf

PD - 95320IRFL9110PbFHEXFET Power MOSFET Surface Mount Available in Tape & Reel DVDSS = -100V Dynamic dv/dt Rating Repetitive Avalanche Rated P-ChannelRDS(on) = 1.2 Fast SwitchingG Ease of Paralleling Lead-FreeID = -1.1ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, rugg
irfl9110 sihfl9110.pdf

IRFL9110, SiHFL9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100 Definition Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and ReelQg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche RatedQgd (nC) 4.1 P-Channel Fast SwitchingConfiguration Single
irfl9110trpbf.pdf

IRFL9110TRPBFwww.VBsemi.twP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Application
Datasheet: IRFL1006PBF , IRFL110PBF , IRFL210PBF , IRFL214PBF , IRFL4105PBF , IRFL4310PBF , IRFL4315PBF , IRFL9014PBF , IRF840 , IRLZ44PBF , IRLZ44S , IRLZ44SPBF , IRLZ44ZLPBF , IRLZ44ZPBF , IRLZ44ZSPBF , IRLZ44NLPBF , IRLZ44NPBF .
History: HUF75337S3 | FCP104N60 | SFW025N100C3
Keywords - IRFL9110PBF MOSFET datasheet
IRFL9110PBF cross reference
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IRFL9110PBF replacement
History: HUF75337S3 | FCP104N60 | SFW025N100C3



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