All MOSFET. IRLIB4343 Datasheet

 

IRLIB4343 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLIB4343
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO220F

 IRLIB4343 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLIB4343 Datasheet (PDF)

 ..1. Size:234K  international rectifier
 irlib4343.pdf

IRLIB4343 IRLIB4343

PD - 95857ADIGITAL AUDIO MOSFETIRLIB4343Featuresl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for Class-D AudioAmplifier ApplicationsVDS55 Vl Low RDSON for Improved EfficiencyRDS(ON) typ. @ VGS = 10V m:42l Low Qg and Qsw for Better THD and ImprovedRDS(ON) typ. @ VGS = 4.5V m:57EfficiencyQg typ.l Low Qrr for Better THD and Lower EMI 28

 9.1. Size:212K  international rectifier
 irlib9343pbf.pdf

IRLIB4343 IRLIB4343

PD - 95745DIGITAL AUDIO MOSFETIRLIB9343PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for Class-D Audio Amplifier ApplicationsVDS-55 Vl Low RDSON for Improved EfficiencyRDS(ON) typ. @ VGS = -10V m93l Low Qg and Qsw for Better THD and ImprovedRDS(ON) typ. @ VGS = -4.5V m150 EfficiencyQg typ.l Low Qrr for Better THD and Lower E

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: P085AATX | DMP2066LSS | BUK6207-55C

 

 
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