IRF9240SMD MOSFET Datasheet: P-Ch, 200V, 11A. Full specification with pinout and replacement list

IRF9240SMD Specs and Replacement

Type Designator: IRF9240SMD

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 570 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO276AB

IRF9240SMD substitution

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IRF9240SMD datasheet

..1. Size:25K semelab
irf9240smd.pdf pdf_icon

IRF9240 IRFN9240 IRF9240SMD MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) IRF9240 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) D 1 2 3 (case) G 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) S TO 3 Package (TO-204AA) FEATURES Pin 1 Gate Pin 2 Source Pin 3 Drain P... See More ⇒

7.1. Size:147K international rectifier
irf9240.pdf pdf_icon

PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED IRF9240 HEXFET TRANSISTORS 200V, P-CHANNEL THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF9240 -200V 0.5 -11A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design... See More ⇒

7.2. Size:490K samsung
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