IRFL210 MOSFET Datasheet: N-Ch, 200V, 0.96A. Full specification with pinout and replacement list

IRFL210 Specs and Replacement

Type Designator: IRFL210

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.96 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT223

IRFL210 substitution

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IRFL210 datasheet

..1. Size:182K international rectifier
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..2. Size:803K international rectifier
irfl210pbf.pdf pdf_icon

PD- 95228 IRFL210PbF Lead-Free 04/28/04 Document Number 91193 www.vishay.com 1 IRFL210PbF Document Number 91193 www.vishay.com 2 IRFL210PbF Document Number 91193 www.vishay.com 3 IRFL210PbF Document Number 91193 www.vishay.com 4 IRFL210PbF Document Number 91193 www.vishay.com 5 IRFL210PbF Document Number 91193 www.vishay.com 6 IRFL210PbF Document Number 91... See More ⇒

..3. Size:170K vishay
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IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) ( )VGS = 10 V 1.5 Surface Mount Qg (Max.) (nC) 8.2 Available in Tape and Reel Qgs (nC) 1.8 Dynamic dV/dt Rating Qgd (nC) 4.5 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Parallelin... See More ⇒

0.1. Size:1687K cn vbsemi
irfl210trpbf.pdf pdf_icon

IRFL210TRPBF www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Available in tape and reel VDS (V) 200 Dynamic dV/dt rating RDS(on) ( )VGS = 10 V 1.2 Repetitive avalanche rated Qg (Max.) (nC) 8.2 Fast switching Qgs (nC) 1.8 Ease of paralleling Available Qgd (nC) 4.5 Simple drive requirements Configuration Single D SOT-223 D G S D... See More ⇒