All MOSFET. IRHQ57110 Datasheet

 

IRHQ57110 Datasheet and Replacement


   Type Designator: IRHQ57110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: LCC28
 

 IRHQ57110 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRHQ57110 Datasheet (PDF)

 ..1. Size:128K  international rectifier
irhq57110.pdf pdf_icon

IRHQ57110

PD - 94211 IRHQ57110100V, Quad N-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-28) 4#4 Product Summary Part Number Radiation Level RDS(on) IDIRHQ57110 100K Rads (Si) 0.27 4.6AIRHQ53110 300K Rads (Si) 0.27 4.6AIRHQ54110 600K Rads (Si) 0.27 4.6AIRHQ58110 1000K Rads (Si) 0.29 4.6A LCC-28International Rectif

 8.1. Size:131K  international rectifier
irhq57214se.pdf pdf_icon

IRHQ57110

PD - 93881BRADIATION HARDENED IRHQ57214SEPOWER MOSFET250V, QUAD N-CHANNELSURFACE MOUNT (LCC-28)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHQ57214SE 100K Rads (Si) 1.5 1.9ALCC-28International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli- Features:cations. These devices have been characterized

 9.1. Size:198K  international rectifier
irhq567110.pdf pdf_icon

IRHQ57110

PD - 94057BIRHQ567110100V, Combination 2N-2P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-28) 4#4 Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHQ567110 100K Rads (Si) 0.27 4.6A N IRHQ563110 300K Rads (Si) 0.29 4.6A N IRHQ567110 100K Rads (Si) 0.96 -2.8A P IRHQ563110 300K Rads (Si) 0.98 -

 9.2. Size:128K  international rectifier
irhq597110.pdf pdf_icon

IRHQ57110

PD - 94210IRHQ597110100V, Quad P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-28) 4#4 Product Summary Part Number Radiation Level RDS(on) ID IRHQ597110 100K Rads (Si) 0.96 -2.8A IRHQ593110 300K Rads (Si) 0.98 -2.8A LCC-28International Rectifiers RAD-HardTM HEXFET MOSFETFeatures:Technology provides high p

Datasheet: IRFU7440PBF , IRFU7540PBF , IRFU7546PBF , IRFU7740PBF , IRFU7746PBF , IRHE7110 , IRHE9110 , IRHQ567110 , AON6414A , IRHQ57214SE , IRHQ597110 , IRHQ6110 , IRHQ7110 , IRHQ9110 , IRLU3705ZPBF , IRLU3714 , IRLU3714PBF .

History: GSM4435S | NTD6416ANT | AM7361P | KO3402 | NTMD3P03R2G | STD16N65M5 | 2SJ585LS

Keywords - IRHQ57110 MOSFET datasheet

 IRHQ57110 cross reference
 IRHQ57110 equivalent finder
 IRHQ57110 lookup
 IRHQ57110 substitution
 IRHQ57110 replacement

 

 
Back to Top

 


 
.