All MOSFET. IRHQ6110 Datasheet

 

IRHQ6110 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRHQ6110
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3(2.3) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6(1.1) Ohm
   Package: LCC28

 IRHQ6110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRHQ6110 Datasheet (PDF)

 ..1. Size:201K  international rectifier
 irhq6110.pdf

IRHQ6110 IRHQ6110

PD - 91781AIRHQ6110100V, Combination 2N-2P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETMOSFET TECHNOLOGY SURFACE MOUNT (LCC-28)Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHQ6110 100K Rads (Si) 0.6 3.0A N IRHQ63110 300K Rads (Si) 0.6 3.0A N IRHQ6110 100K Rads (Si) 1.1 -2.3A P IRHQ63110 300K Rads (Si) 1.1 -2.3A P LCC-28

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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