IRHQ6110 PDF and Equivalents Search

 

IRHQ6110 Specs and Replacement

Type Designator: IRHQ6110

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3(2.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6(1.1) Ohm

Package: LCC28

IRHQ6110 substitution

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IRHQ6110 datasheet

 ..1. Size:201K  international rectifier
 irhq6110.pdf pdf_icon

IRHQ6110

PD - 91781A IRHQ6110 100V, Combination 2N-2P-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHQ6110 100K Rads (Si) 0.6 3.0A N IRHQ63110 300K Rads (Si) 0.6 3.0A N IRHQ6110 100K Rads (Si) 1.1 -2.3A P IRHQ63110 300K Rads (Si) 1.1 -2.3A P LCC-28... See More ⇒

Detailed specifications: IRFU7740PBF, IRFU7746PBF, IRHE7110, IRHE9110, IRHQ567110, IRHQ57110, IRHQ57214SE, IRHQ597110, AON6414A, IRHQ7110, IRHQ9110, IRLU3705ZPBF, IRLU3714, IRLU3714PBF, IRLU3714ZPBF, IRLU3715, IRLU3715PBF

Keywords - IRHQ6110 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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