All MOSFET. IRHQ6110 Datasheet

 

IRHQ6110 Datasheet and Replacement


   Type Designator: IRHQ6110
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3(2.3) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6(1.1) Ohm
   Package: LCC28
 

 IRHQ6110 substitution

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IRHQ6110 Datasheet (PDF)

 ..1. Size:201K  international rectifier
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IRHQ6110

PD - 91781AIRHQ6110100V, Combination 2N-2P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETMOSFET TECHNOLOGY SURFACE MOUNT (LCC-28)Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHQ6110 100K Rads (Si) 0.6 3.0A N IRHQ63110 300K Rads (Si) 0.6 3.0A N IRHQ6110 100K Rads (Si) 1.1 -2.3A P IRHQ63110 300K Rads (Si) 1.1 -2.3A P LCC-28

Datasheet: IRFU7740PBF , IRFU7746PBF , IRHE7110 , IRHE9110 , IRHQ567110 , IRHQ57110 , IRHQ57214SE , IRHQ597110 , IRFB4110 , IRHQ7110 , IRHQ9110 , IRLU3705ZPBF , IRLU3714 , IRLU3714PBF , IRLU3714ZPBF , IRLU3715 , IRLU3715PBF .

History: WML53N60C4

Keywords - IRHQ6110 MOSFET datasheet

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