All MOSFET. IRHQ6110 Datasheet

 

IRHQ6110 Datasheet and Replacement


   Type Designator: IRHQ6110
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3(2.3) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6(1.1) Ohm
   Package: LCC28
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IRHQ6110 Datasheet (PDF)

 ..1. Size:201K  international rectifier
 irhq6110.pdf pdf_icon

IRHQ6110

PD - 91781AIRHQ6110100V, Combination 2N-2P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETMOSFET TECHNOLOGY SURFACE MOUNT (LCC-28)Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHQ6110 100K Rads (Si) 0.6 3.0A N IRHQ63110 300K Rads (Si) 0.6 3.0A N IRHQ6110 100K Rads (Si) 1.1 -2.3A P IRHQ63110 300K Rads (Si) 1.1 -2.3A P LCC-28

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PD5B3BA | R6006JND3 | 1N70Z | AP30H80Q | 2SJ512 | HSL0107 | 2SK2015

Keywords - IRHQ6110 MOSFET datasheet

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