IRLR3636PBF PDF and Equivalents Search

 

IRLR3636PBF Specs and Replacement

Type Designator: IRLR3636PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 143 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 216 nS

Cossⓘ - Output Capacitance: 332 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: TO252

IRLR3636PBF substitution

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IRLR3636PBF datasheet

 ..1. Size:383K  international rectifier
irlr3636pbf irlu3636pbf.pdf pdf_icon

IRLR3636PBF

PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 60V l High Speed Power Switching RDS(on) typ. 5.4m l Hard Switched and High Frequency Circuits max. 6.8m G ID (Silicon Limited) 99A Benefits ID (Package Limited) 50A S l Optimized for Logic Level... See More ⇒

 ..2. Size:383K  international rectifier
irlu3636pbf irlr3636pbf.pdf pdf_icon

IRLR3636PBF

PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 60V l High Speed Power Switching RDS(on) typ. 5.4m l Hard Switched and High Frequency Circuits max. 6.8m G ID (Silicon Limited) 99A Benefits ID (Package Limited) 50A S l Optimized for Logic Level... See More ⇒

 6.1. Size:636K  infineon
auirlr3636.pdf pdf_icon

IRLR3636PBF

AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175 C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C... See More ⇒

 6.2. Size:1055K  cn vbsemi
irlr3636trpbf.pdf pdf_icon

IRLR3636PBF

IRLR3636TRPBF www.VBsemi.tw N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0063 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0120 ID (A) 97 Configuration Single D TO-252 G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25... See More ⇒

Detailed specifications: IRLR2905ZPBF, IRLR2908PBF, IRLR3103PBF, IRLR3105PBF, IRLR3110ZPBF, IRLR3114ZPBF, IRLR3303PBF, IRLR3410PBF, 50N06, IRLR6225PBF, IRLU2905PBF, IRLU3105PBF, IRLU2908PBF, IRLU014N, IRLU014NPBF, IRLU014PBF, IRLU024NPBF

Keywords - IRLR3636PBF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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