IRLML2803PBF MOSFET Datasheet: N-Ch, 30V, 1.2A. Full specification with pinout and replacement list

IRLML2803PBF Specs and Replacement

   Type Designator: IRLML2803PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT23 SOT346

IRLML2803PBF substitution

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IRLML2803PBF datasheet

..1. Size:252K international rectifier
irlml2803pbf.pdf pdf_icon

IRLML2803PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 30V l Low Profile (... See More ⇒

0.1. Size:241K international rectifier
irlml2803pbf-1 irlml5103pbf-1.pdf pdf_icon

IRLML2803PbF-1 HEXFET Power MOSFET VDS 30 V RDS(on) max G 1 0.25 (@V = 10V) GS Qg (typical) 3.3 nC 3 D ID 1.2 A S 2 (@T = 25 C) A Micro3 Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industr... See More ⇒

5.1. Size:221K international rectifier
irlml2803gpbf.pdf pdf_icon

PD - 96164A IRLML2803GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET G 1 VDSS = 30V l SOT-23 Footprint 3 D l Low Profile (... See More ⇒

5.2. Size:100K international rectifier
irlml2803.pdf pdf_icon

PD - 9.1258C IRLML2803 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance N-Channel MOSFET VDSS = 30V SOT-23 Footprint Low Profile (... See More ⇒