IRLD024PBF MOSFET Datasheet: N-Ch, 60V, 2.5A. Full specification with pinout and replacement list

IRLD024PBF Specs and Replacement

Type Designator: IRLD024PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: DIP4

IRLD024PBF substitution

- MOSFET ⓘ Cross-Reference Search

IRLD024PBF datasheet

..1. Size:1763K international rectifier
irld024pbf.pdf pdf_icon

PD- 95981 IRLD024PbF Lead-Free 12/21/04 Document Number 91308 www.vishay.com 1 IRLD024PbF Document Number 91308 www.vishay.com 2 IRLD024PbF Document Number 91308 www.vishay.com 3 IRLD024PbF Document Number 91308 www.vishay.com 4 IRLD024PbF Document Number 91308 www.vishay.com 5 IRLD024PbF Document Number 91308 www.vishay.com 6 IRLD024PbF Peak Diode Recovery... See More ⇒

7.1. Size:170K international rectifier
irld024.pdf pdf_icon

... See More ⇒

7.2. Size:1692K vishay
irld024 sihld024.pdf pdf_icon

IRLD024, SiHLD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 5.0 V 0.10 RoHS* End Stackable Qg (Max.) (nC) 18 COMPLIANT Logic-Level Gate Drive Qgs (nC) 4.5 Qgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operating Temperature... See More ⇒

9.1. Size:172K international rectifier
irld014.pdf pdf_icon