IRLF120 Specs and Replacement
Type Designator: IRLF120
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO39
IRLF120 substitution
- MOSFET ⓘ Cross-Reference Search
IRLF120 datasheet
irlf120.pdf
PD - 90639A REPETITIVE AVALANCHE AND dv/dt RATED IRLF120 HEXFET TRANSISTORS 100V, N-CHANNEL THRU-HOLE (TO-39) Product Summary Part Number BVDSS RDS(on) ID IRLF120 100V 0.35 5.3A The Logic Level L series of power MOSFETs are de- signed to be operated with level logic gate-to-source voltage of 5V. In addition to the well established characterstics of HEXFETs , they have th... See More ⇒
Detailed specifications: IRLH5034PBF, IRLH5036PBF, IRLH6224PBF, IRLH7134PBF, IRLD014PBF, IRLD024PBF, IRLD110PBF, IRLD120PBF, 20N60, IRFJ240, IRFV064, IRFV260, IRFV360, IRFV460, IRFW610B, IRFI630B, IRFW710B
Keywords - IRLF120 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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