All MOSFET. IRLF120 Datasheet

 

IRLF120 Datasheet and Replacement


   Type Designator: IRLF120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO39
 

 IRLF120 substitution

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IRLF120 Datasheet (PDF)

 ..1. Size:548K  international rectifier
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IRLF120

PD - 90639AREPETITIVE AVALANCHE AND dv/dt RATED IRLF120HEXFETTRANSISTORS 100V, N-CHANNELTHRU-HOLE (TO-39)Product Summary Part Number BVDSS RDS(on) IDIRLF120 100V 0.35 5.3AThe Logic Level L series of power MOSFETs are de-signed to be operated with level logic gate-to-sourcevoltage of 5V. In addition to the well establishedcharacterstics of HEXFETs, they have th

Datasheet: IRLH5034PBF , IRLH5036PBF , IRLH6224PBF , IRLH7134PBF , IRLD014PBF , IRLD024PBF , IRLD110PBF , IRLD120PBF , IRF840 , IRFJ240 , IRFV064 , IRFV260 , IRFV360 , IRFV460 , IRFW610B , IRFI630B , IRFW710B .

History: SI8800EDB

Keywords - IRLF120 MOSFET datasheet

 IRLF120 cross reference
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