All MOSFET. IRLF120 Datasheet

 

IRLF120 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLF120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.4 nC
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO39

 IRLF120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLF120 Datasheet (PDF)

 ..1. Size:548K  international rectifier
 irlf120.pdf

IRLF120 IRLF120

PD - 90639AREPETITIVE AVALANCHE AND dv/dt RATED IRLF120HEXFETTRANSISTORS 100V, N-CHANNELTHRU-HOLE (TO-39)Product Summary Part Number BVDSS RDS(on) IDIRLF120 100V 0.35 5.3AThe Logic Level L series of power MOSFETs are de-signed to be operated with level logic gate-to-sourcevoltage of 5V. In addition to the well establishedcharacterstics of HEXFETs, they have th

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CSP10N4P2

 

 
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