All MOSFET. IRFV260 Datasheet

 

IRFV260 Datasheet and Replacement


   Type Designator: IRFV260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO258AA
 

 IRFV260 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRFV260 Datasheet (PDF)

 ..1. Size:33K  international rectifier
 irfv260.pdf pdf_icon

IRFV260

Provisional Data Sheet No. PD-9.2002IRFV260HEXFET TRANSISTORN-CHANNELProduct Summary200 Volt, 0.060, HEXFETPart Number BVDSS RDS(on) IDHEXFET technology is the key to InternationalIRFV260 200V 0.060 45A*Rectifiers advanced line of power MOSFET transis-tors. The efficient geometry design achieves veryFeatures:low on-state resistance combined

Datasheet: IRLH7134PBF , IRLD014PBF , IRLD024PBF , IRLD110PBF , IRLD120PBF , IRLF120 , IRFJ240 , IRFV064 , 50N06 , IRFV360 , IRFV460 , IRFW610B , IRFI630B , IRFW710B , IRFI064 , IRFI1010NPBF , IRFI1310NPBF .

History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS

Keywords - IRFV260 MOSFET datasheet

 IRFV260 cross reference
 IRFV260 equivalent finder
 IRFV260 lookup
 IRFV260 substitution
 IRFV260 replacement

 

 
Back to Top

 


 
.