All MOSFET. IRFI260 Datasheet

 

IRFI260 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFI260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO259AA

 IRFI260 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFI260 Datasheet (PDF)

 ..1. Size:57K  international rectifier
 irfi260.pdf

IRFI260 IRFI260

D . D . 14.1 $ HEXFET TRANSISTORN-CHANNELProduct Summary200 Volt, 0.060, HEXFETPart Number BVDSS RDS(on) IDHEXFET technology is the key to InternationalIRFI260 200V 0.060 45A*Rectifiers advanced line of power MOSFET transis-tors. The efficient geometry design achieves veryFeatures:low on-state resistance combined with high trans- Herm

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF7478QPBF | VBQF1310 | VMM1500-0075X2

 

 
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