All MOSFET. IRFI260 Datasheet

 

IRFI260 Datasheet and Replacement


   Type Designator: IRFI260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO259AA
 

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IRFI260 Datasheet (PDF)

 ..1. Size:57K  international rectifier
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IRFI260

D . D . 14.1 $ HEXFET TRANSISTORN-CHANNELProduct Summary200 Volt, 0.060, HEXFETPart Number BVDSS RDS(on) IDHEXFET technology is the key to InternationalIRFI260 200V 0.060 45A*Rectifiers advanced line of power MOSFET transis-tors. The efficient geometry design achieves veryFeatures:low on-state resistance combined with high trans- Herm

Datasheet: IRFV360 , IRFV460 , IRFW610B , IRFI630B , IRFW710B , IRFI064 , IRFI1010NPBF , IRFI1310NPBF , IRF3710 , IRFI3205PBF , IRFI360 , IRFI4110GPBF , IRFI4227PBF , IRFI4228PBF , IRFI4229PBF , IRFI4321PBF , IRFI4410ZGPBF .

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