All MOSFET. IRFN130 Datasheet

 

IRFN130 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFN130
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28.5(max) nC
   trⓘ - Rise Time: 75(max) nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: SMD1

 IRFN130 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFN130 Datasheet (PDF)

 0.1. Size:21K  semelab
 irfn130smd.pdf

IRFN130 IRFN130

IRFN130SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS 100VID(cont) 11ARDS(on) 0.19 FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTSSMD1 LIGHTWEIGHTPad 1 Source Pad 2 Drain Pad 3 Gate SCREENING OPTIONS AV

 0.2. Size:36K  semelab
 irfn130smd05 irfnj130.pdf

IRFN130 IRFN130

IRFNJ130NIRFN130SMD05MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max.APPLICATIONS 0.127 (0.005)1 3VDSS 100VID(cont) 11A2RDS(on) 0.19FEATURES 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020) HERMETICALLY SEALED 0.50 (0.020)max.7.26 (0.28

 9.1. Size:183K  international rectifier
 irfn140.pdf

IRFN130 IRFN130

PD - 91546CIRFN140JANTX2N7218UJANTXV2N7218UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN140 0.077 28AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

 9.2. Size:166K  international rectifier
 irfn150.pdf

IRFN130 IRFN130

PD - 91547CIRFN150JANTX2N7224UJANTXV2N7224UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN150 0.07 34AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

 9.3. Size:22K  semelab
 irfn140smd.pdf

IRFN130 IRFN130

IRFN140SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 13.9A RDS(on) 0.077FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. S

 9.4. Size:22K  semelab
 irfn150smd.pdf

IRFN130 IRFN130

IRFN150SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

Datasheet: IRFM350 , IRFM360 , IRFM440 , IRFM460 , IRFM9140 , IRFM9240 , IRFN044 , IRFN054 , IRFB3607 , IRFN140 , IRFN150 , IRFN240 , IRFN250 , IRFN340 , IRFN350 , IRFN440 , IRFN450 .

 

 
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