IRFI9Z14G Datasheet and Replacement
Type Designator: IRFI9Z14G
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pd ⓘ
- Maximum Power Dissipation: 27
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id| ⓘ - Maximum Drain Current: 5.3
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Qg ⓘ - Total Gate Charge: 12
nC
tr ⓘ - Rise Time: 63
nS
Cossⓘ -
Output Capacitance: 170
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO220F
-
MOSFET ⓘ Cross-Reference Search
IRFI9Z14G Datasheet (PDF)
..2. Size:1829K international rectifier
irfi9z14gpbf.pdf 
PD- 95975IRFI9Z14GPbF Lead-Free12/20/04Document Number: 91170 www.vishay.com1IRFI9Z14GPbFDocument Number: 91170 www.vishay.com2IRFI9Z14GPbFDocument Number: 91170 www.vishay.com3IRFI9Z14GPbFDocument Number: 91170 www.vishay.com4IRFI9Z14GPbFDocument Number: 91170 www.vishay.com5IRFI9Z14GPbFDocument Number: 91170 www.vishay.com6IRFI9Z14GPbFPeak
..3. Size:1578K vishay
irfi9z14g sihfi9z14g.pdf
IRFI9Z14G, SiHFI9Z14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV
0.1. Size:1580K vishay
irfi9z14g-pbf sihfi9z14g.pdf
IRFI9Z14G, SiHFI9Z14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV
8.1. Size:119K international rectifier
irfi9z24n.pdf
PD - 9.1529AIRFI9Z24NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.175 P-ChannelG Fully Avalanche RatedID = -9.5ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on
8.2. Size:1774K international rectifier
irfi9z24gpbf.pdf
PD- 95976IRFI9Z24GPbF Lead-Free12/20/04Document Number: 91171 www.vishay.com1IRFI9Z24GPbFDocument Number: 91171 www.vishay.com2IRFI9Z24GPbFDocument Number: 91171 www.vishay.com3IRFI9Z24GPbFDocument Number: 91171 www.vishay.com4IRFI9Z24GPbFDocument Number: 91171 www.vishay.com5IRFI9Z24GPbFDocument Number: 91171 www.vishay.com6IRFI9Z24GPbFPeak
8.4. Size:911K international rectifier
irfi9z34g.pdf
PD - 94866IRFI9Z34GPbF Lead-Free12/04/03Document Number: 91172 www.vishay.com1IRFI9Z34GPbFDocument Number: 91172 www.vishay.com2IRFI9Z34GPbFDocument Number: 91172 www.vishay.com3IRFI9Z34GPbFDocument Number: 91172 www.vishay.com4IRFI9Z34GPbFDocument Number: 91172 www.vishay.com5IRFI9Z34GPbFDocument Number: 91172 www.vishay.com6IRFI9Z34GPbFTO-2
8.5. Size:120K international rectifier
irfi9z34n.pdf
PD - 9.1530AIRFI9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -14ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-r
8.6. Size:1485K vishay
irfi9z24g-pbf sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt
8.7. Size:1483K vishay
irfi9z24g sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt
8.8. Size:1417K vishay
irfi9z34g-pbf sihfi9z34g.pdf
IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/
8.9. Size:1415K vishay
irfi9z34g sihfi9z34g.pdf
IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/
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