IRLB3036GPBF Datasheet. Specs and Replacement

Type Designator: IRLB3036GPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 380 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 195 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 220 nS

Cossⓘ - Output Capacitance: 1020 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO220AB

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IRLB3036GPBF substitution

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IRLB3036GPBF datasheet

 ..1. Size:294K  international rectifier
 irlb3036gpbf.pdf pdf_icon

IRLB3036GPBF

PD - 96275 IRLB3036GPbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive ... See More ⇒

 6.1. Size:284K  international rectifier
 irlb3036pbf.pdf pdf_icon

IRLB3036GPBF

PD - 97357 IRLB3036PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive ... See More ⇒

 6.2. Size:250K  international rectifier
 auirlb3036.pdf pdf_icon

IRLB3036GPBF

AUTOMOTIVE GRADE AUIRLB3036 HEXFET Power MOSFET Features D l Advanced Process Technology VDSS 60V l Ultra Low On-Resistance RDS(on) typ. 1.9m l Logic Level Gate Drive max. 2.4m l Dynamic dv/dt Rating G ID (Silicon Limited) l 175 C Operating Temperature 270A l Fast Switching ID (Package Limited) S 195A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compli... See More ⇒

 6.3. Size:251K  inchange semiconductor
 irlb3036.pdf pdf_icon

IRLB3036GPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLB3036 IIRLB3036 FEATURES Static drain-source on-resistance RDS(on) 2.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU... See More ⇒

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Detailed specifications: IRFIB7N50APBF, IRFIB7N50LPBF, IRFIB8N50K, IRFIBC30GPBF, IRL8113LPBF, IRL8113SPBF, IRL8114PBF, IRLB3034PBF, IRF730, IRLB3036PBF, IRLB3813PBF, IRLB4030PBF, IRLB8314PBF, IRLB8721PBF, IRLB8743PBF, IRLB8748PBF, IRL7472L1TRPBF

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