All MOSFET. IRL5Y024CM Datasheet

 

IRL5Y024CM MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRL5Y024CM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.7 nC
   trⓘ - Rise Time: 133 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: TO257AA

 IRL5Y024CM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL5Y024CM Datasheet (PDF)

 ..1. Size:103K  international rectifier
 irl5y024cm.pdf

IRL5Y024CM IRL5Y024CM

PD - 94018AHEXFET POWER MOSFET IRL5Y024CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRL5Y024CM 55V 0.069 17AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with thef

 9.1. Size:101K  international rectifier
 irl5y7413cm.pdf

IRL5Y024CM IRL5Y024CM

PD - 94164AHEXFET POWER MOSFET IRL5Y7413CMTHRU-HOLE (TO-257AA)30V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRL5Y7413CM 30V 0.025 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: QM6008P | IXFH320N10T2

 

 
Back to Top