IRL5Y024CM PDF and Equivalents Search

 

IRL5Y024CM Specs and Replacement

Type Designator: IRL5Y024CM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 133 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm

Package: TO257AA

IRL5Y024CM substitution

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IRL5Y024CM datasheet

 ..1. Size:103K  international rectifier
irl5y024cm.pdf pdf_icon

IRL5Y024CM

PD - 94018A HEXFET POWER MOSFET IRL5Y024CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL5Y024CM 55V 0.069 17A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the f... See More ⇒

 9.1. Size:101K  international rectifier
irl5y7413cm.pdf pdf_icon

IRL5Y024CM

PD - 94164A HEXFET POWER MOSFET IRL5Y7413CM THRU-HOLE (TO-257AA) 30V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL5Y7413CM 30V 0.025 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒

Detailed specifications: IRL630PBF, IRL630SPBF, IRL6342PBF, IRL640PBF, IRL640SPBF, IRL5NJ024, IRL5NJ7404, IRL5NJ7413, IRF740, IRL5Y7413CM, IRL5602SPBF, IRL510PBF, IRL510S, IRL510SPBF, IRL520L, IRL520LPBF, IRL520NLPBF

Keywords - IRL5Y024CM MOSFET specs

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