IRL5602SPBF PDF and Equivalents Search

 

IRL5602SPBF Specs and Replacement

Type Designator: IRL5602SPBF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 790 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO263

IRL5602SPBF substitution

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IRL5602SPBF datasheet

 ..1. Size:238K  international rectifier
irl5602spbf.pdf pdf_icon

IRL5602SPBF

PD- 95099 IRL5602SPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -20V l 175 C Operating Temperature l P-Channel RDS(on) = 0.042 l Fast Switching G l Fully Avalanche Rated ID = -24A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist... See More ⇒

 6.1. Size:171K  international rectifier
irl5602s.pdf pdf_icon

IRL5602SPBF

PD- 91888 IRL5602S HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -20V l 175 C Operating Temperature l P-Channel RDS(on) = 0.042W l Fast Switching G l Fully Avalanche Rated ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒

Detailed specifications: IRL6342PBF , IRL640PBF , IRL640SPBF , IRL5NJ024 , IRL5NJ7404 , IRL5NJ7413 , IRL5Y024CM , IRL5Y7413CM , 20N60 , IRL510PBF , IRL510S , IRL510SPBF , IRL520L , IRL520LPBF , IRL520NLPBF , IRL520NPBF , IRL520NSPBF .

Keywords - IRL5602SPBF MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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