IRL5602SPBF Specs and Replacement
Type Designator: IRL5602SPBF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TO263
IRL5602SPBF substitution
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IRL5602SPBF datasheet
irl5602spbf.pdf
PD- 95099 IRL5602SPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -20V l 175 C Operating Temperature l P-Channel RDS(on) = 0.042 l Fast Switching G l Fully Avalanche Rated ID = -24A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist... See More ⇒
irl5602s.pdf
PD- 91888 IRL5602S HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -20V l 175 C Operating Temperature l P-Channel RDS(on) = 0.042W l Fast Switching G l Fully Avalanche Rated ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒
Detailed specifications: IRL6342PBF , IRL640PBF , IRL640SPBF , IRL5NJ024 , IRL5NJ7404 , IRL5NJ7413 , IRL5Y024CM , IRL5Y7413CM , 20N60 , IRL510PBF , IRL510S , IRL510SPBF , IRL520L , IRL520LPBF , IRL520NLPBF , IRL520NPBF , IRL520NSPBF .
Keywords - IRL5602SPBF MOSFET specs
IRL5602SPBF cross reference
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IRL5602SPBF substitution
IRL5602SPBF replacement
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