All MOSFET. IRL5602SPBF Datasheet

 

IRL5602SPBF Datasheet and Replacement


   Type Designator: IRL5602SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO263
 

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IRL5602SPBF Datasheet (PDF)

 ..1. Size:238K  international rectifier
 irl5602spbf.pdf pdf_icon

IRL5602SPBF

PD- 95099IRL5602SPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = -20Vl 175C Operating Temperaturel P-ChannelRDS(on) = 0.042l Fast SwitchingGl Fully Avalanche RatedID = -24Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resist

 6.1. Size:171K  international rectifier
 irl5602s.pdf pdf_icon

IRL5602SPBF

PD- 91888IRL5602SHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = -20Vl 175C Operating Temperaturel P-ChannelRDS(on) = 0.042Wl Fast SwitchingGl Fully Avalanche RatedID = -24ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon a

Datasheet: IRL6342PBF , IRL640PBF , IRL640SPBF , IRL5NJ024 , IRL5NJ7404 , IRL5NJ7413 , IRL5Y024CM , IRL5Y7413CM , IRF840 , IRL510PBF , IRL510S , IRL510SPBF , IRL520L , IRL520LPBF , IRL520NLPBF , IRL520NPBF , IRL520NSPBF .

History: R6030KNZ1 | JMSL0612AGQ | SLF7N60C

Keywords - IRL5602SPBF MOSFET datasheet

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