All MOSFET. IRFN450 Datasheet

 

IRFN450 Datasheet and Replacement


   Type Designator: IRFN450
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 120(max) nC
   tr ⓘ - Rise Time: 190(max) nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.415 Ohm
   Package: SMD1
 

 IRFN450 substitution

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IRFN450 Datasheet (PDF)

 ..1. Size:182K  international rectifier
 irfn450.pdf pdf_icon

IRFN450

PD - 90418CIRFN450JANTX2N7228UJANTXV2N7228UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

 9.1. Size:181K  international rectifier
 irfn440.pdf pdf_icon

IRFN450

PD - 91552CIRFN440JANTX2N7222UJANTXV2N7222UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN440 0.85 8.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

Datasheet: IRFN130 , IRFN140 , IRFN150 , IRFN240 , IRFN250 , IRFN340 , IRFN350 , IRFN440 , STP80NF70 , IRFN9130 , IRFN9130SMD , IRFN9140 , IRFN9140SMD , IRFN9240 , IRFP044 , IRFP044N , IRFP048 .

History: FSS23A4R | BS170G

Keywords - IRFN450 MOSFET datasheet

 IRFN450 cross reference
 IRFN450 equivalent finder
 IRFN450 lookup
 IRFN450 substitution
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