IRFN450 Datasheet and Replacement
Type Designator: IRFN450
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 190(max) nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.415 Ohm
Package: SMD1
IRFN450 substitution
IRFN450 Datasheet (PDF)
irfn450.pdf

PD - 90418CIRFN450JANTX2N7228UJANTXV2N7228UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
irfn440.pdf

PD - 91552CIRFN440JANTX2N7222UJANTXV2N7222UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN440 0.85 8.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
Datasheet: IRFN130 , IRFN140 , IRFN150 , IRFN240 , IRFN250 , IRFN340 , IRFN350 , IRFN440 , STP80NF70 , IRFN9130 , IRFN9130SMD , IRFN9140 , IRFN9140SMD , IRFN9240 , IRFP044 , IRFP044N , IRFP048 .
History: ISCNH327P | SIHFB17N50L | TPCP8105 | SMOS44N80 | IRLS3034 | 2SK783 | SSF26NS60
Keywords - IRFN450 MOSFET datasheet
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IRFN450 substitution
IRFN450 replacement
History: ISCNH327P | SIHFB17N50L | TPCP8105 | SMOS44N80 | IRLS3034 | 2SK783 | SSF26NS60



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