All MOSFET. IRFN9130 Datasheet

 

IRFN9130 Datasheet and Replacement


   Type Designator: IRFN9130
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140(max) nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SMD1
 

 IRFN9130 substitution

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IRFN9130 Datasheet (PDF)

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 irfn9130.pdf pdf_icon

IRFN9130

IRFN9130MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -11A RDS(on) 0.3FEATURES HERMETICALLY SEALED SIMPLE DRIVE

 0.1. Size:21K  1
 irfn9130smd.pdf pdf_icon

IRFN9130

IRFN9130SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -9.3A RDS(on) 0.31FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS

 0.2. Size:21K  semelab
 irfn9130smd05.pdf pdf_icon

IRFN9130

IRF9130SMD05NIRFN9130SMD05MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -8A RDS(on) 0.35FEATURES HERMETICALLY SEALED

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 irfn9140smd.pdf pdf_icon

IRFN9130

IRFN9140SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET VDSS 100V ID(cont) 14A RDS(on) 0.020FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

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Datasheet: IRFN140 , IRFN150 , IRFN240 , IRFN250 , IRFN340 , IRFN350 , IRFN440 , IRFN450 , 5N60 , IRFN9130SMD , IRFN9140 , IRFN9140SMD , IRFN9240 , IRFP044 , IRFP044N , IRFP048 , IRFP048N .

History: SQD100N04-3M6

Keywords - IRFN9130 MOSFET datasheet

 IRFN9130 cross reference
 IRFN9130 equivalent finder
 IRFN9130 lookup
 IRFN9130 substitution
 IRFN9130 replacement

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