All MOSFET. IRHY597034CM Datasheet

 

IRHY597034CM Datasheet and Replacement


   Type Designator: IRHY597034CM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 575 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO257AA
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IRHY597034CM Datasheet (PDF)

 ..1. Size:204K  international rectifier
irhy597034cm.pdf pdf_icon

IRHY597034CM

PD - 94663ARADIATION HARDENED IRHY597034CMPOWER MOSFET60V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHY597034CM 100K Rads (Si) 0.095 -18A* IRHY593034CM 300K Rads (Si) 0.095 -18A*T0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceFeatures:applica

 7.1. Size:533K  international rectifier
irhy597130cm irhy597230cm.pdf pdf_icon

IRHY597034CM

The documentation and process conversion measures INCH-POUND necessary to comply with this revision shall be completed by 18 September 2014 MIL-PRF-19500/712E 18 July 2014 SUPERSEDING MIL-PRF-19500/712D 8 April 2014 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3,

 7.2. Size:107K  international rectifier
irhy597130cm.pdf pdf_icon

IRHY597034CM

PD - 94343RADIATION HARDENED IRHY597130CMPOWER MOSFET100V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215 -12.5A IRHY593130CM 300K Rads (Si) 0.215 -12.5AT0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. Th

 7.3. Size:107K  international rectifier
irhy597230cm.pdf pdf_icon

IRHY597034CM

PD - 94319ARADIATION HARDENED IRHY597230CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515 -8.0A IRHY593230CM 300K Rads (Si) 0.515 -8.0AT0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. The

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: N0300N | NCE65N460F | STD4NK60ZT4 | AO4454 | AP30N30W | 2SK2845 | 2N6659-2

Keywords - IRHY597034CM MOSFET datasheet

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