IRHY597034CM MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHY597034CM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 575 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO257AA
IRHY597034CM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHY597034CM Datasheet (PDF)
irhy597034cm.pdf
PD - 94663ARADIATION HARDENED IRHY597034CMPOWER MOSFET60V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHY597034CM 100K Rads (Si) 0.095 -18A* IRHY593034CM 300K Rads (Si) 0.095 -18A*T0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceFeatures:applica
irhy597130cm irhy597230cm.pdf
The documentation and process conversion measures INCH-POUND necessary to comply with this revision shall be completed by 18 September 2014 MIL-PRF-19500/712E 18 July 2014 SUPERSEDING MIL-PRF-19500/712D 8 April 2014 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3,
irhy597130cm.pdf
PD - 94343RADIATION HARDENED IRHY597130CMPOWER MOSFET100V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215 -12.5A IRHY593130CM 300K Rads (Si) 0.215 -12.5AT0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. Th
irhy597230cm.pdf
PD - 94319ARADIATION HARDENED IRHY597230CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515 -8.0A IRHY593230CM 300K Rads (Si) 0.515 -8.0AT0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. The
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: STP30N05FI
History: STP30N05FI
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918