IRHY67C30CM Specs and Replacement

Type Designator: IRHY67C30CM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 79 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO257AA

IRHY67C30CM substitution

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IRHY67C30CM datasheet

 ..1. Size:198K  international rectifier
 irhy67c30cm.pdf pdf_icon

IRHY67C30CM

PD-95837A 2N7599T3 IRHY67C30CM RADIATION HARDENED 600V, N-CHANNEL POWER MOSFET TECHNOLOGY THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level RDS(on) ID IRHY67C30CM 100K Rads (Si) 3.0 3.4A IRHY63C30CM 300K Rads (Si) 3.0 3.4A International Rectifier s R6TM technology provides TO-257AA superior power MOSFETs for space applications. These devices have improve... See More ⇒

 8.1. Size:194K  international rectifier
 irhy67434cm.pdf pdf_icon

IRHY67C30CM

PD-97805 IRHY67434CM RADIATION HARDENED 550V, N-CHANNEL POWER MOSFET TECHNOLOGY THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level RDS(on) ID IRHY67434CM 100K Rads (Si) 3.0 3.4A IRHY63434CM 300K Rads (Si) 3.0 3.4A International Rectifier s R6TM technology provides TO-257AA superior power MOSFETs for space applications. These devices have improved immunity ... See More ⇒

Detailed specifications: IRHY57133CMSE, IRHY57230CMSE, IRHY57234CMSE, IRHY57Z30CM, IRHY597034CM, IRHY597130CM, IRHY597230CM, IRHY67434CM, IRFP460, IRHY7130CM, IRHY7230CM, IRHY9130CM, IRHY9230CM, IRHYB597034CM, IRHYB597Z30CM, IRHYB67130CM, IRHYB67134CM

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