All MOSFET. IRHY67C30CM Datasheet

 

IRHY67C30CM Datasheet and Replacement


   Type Designator: IRHY67C30CM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 79 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO257AA
 

 IRHY67C30CM substitution

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IRHY67C30CM Datasheet (PDF)

 ..1. Size:198K  international rectifier
 irhy67c30cm.pdf pdf_icon

IRHY67C30CM

PD-95837A2N7599T3IRHY67C30CMRADIATION HARDENED600V, N-CHANNELPOWER MOSFETTECHNOLOGYTHRU-HOLE (TO-257AA)Product Summary Part Number Radiation Level RDS(on) ID IRHY67C30CM 100K Rads (Si) 3.0 3.4A IRHY63C30CM 300K Rads (Si) 3.0 3.4AInternational Rectifiers R6TM technology providesTO-257AAsuperior power MOSFETs for space applications.These devices have improve

 8.1. Size:194K  international rectifier
 irhy67434cm.pdf pdf_icon

IRHY67C30CM

PD-97805IRHY67434CMRADIATION HARDENED550V, N-CHANNELPOWER MOSFETTECHNOLOGYTHRU-HOLE (TO-257AA)Product Summary Part Number Radiation Level RDS(on) ID IRHY67434CM 100K Rads (Si) 3.0 3.4A IRHY63434CM 300K Rads (Si) 3.0 3.4AInternational Rectifiers R6TM technology providesTO-257AAsuperior power MOSFETs for space applications.These devices have improved immunity

Datasheet: IRHY57133CMSE , IRHY57230CMSE , IRHY57234CMSE , IRHY57Z30CM , IRHY597034CM , IRHY597130CM , IRHY597230CM , IRHY67434CM , IRF640 , IRHY7130CM , IRHY7230CM , IRHY9130CM , IRHY9230CM , IRHYB597034CM , IRHYB597Z30CM , IRHYB67130CM , IRHYB67134CM .

History: SI7N65F

Keywords - IRHY67C30CM MOSFET datasheet

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