All MOSFET. IRHYB67134CM Datasheet

 

IRHYB67134CM Datasheet and Replacement


   Type Designator: IRHYB67134CM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO257AA
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IRHYB67134CM Datasheet (PDF)

 ..1. Size:188K  international rectifier
 irhyb67134cm.pdf pdf_icon

IRHYB67134CM

PD-96997ARADIATION HARDENED IRHYB67134CMPOWER MOSFET 150V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYB67134CM 100K Rads (Si) 0.090 19A IRHYB63134CM 300K Rads (Si) 0.090 19ALow-OhmicTO-257AA TablessInternational Rectifiers R6TM technology providessuperior power MOSFETs for space applications.These

 5.1. Size:184K  international rectifier
 irhyb67130cm.pdf pdf_icon

IRHYB67134CM

PD-95841BRADIATION HARDENED IRHYB67130CMPOWER MOSFET 100V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYB67130CM 100K Rads (Si) 0.042 20A* IRHYB63130CM 300K Rads (Si) 0.042 20A*Low-OhmicTO-257AA TablessInternational Rectifiers R6TM technology providessuperior power MOSFETs for space applications.The

 7.1. Size:190K  international rectifier
 irhyb67230cm.pdf pdf_icon

IRHYB67134CM

PD-95818DRADIATION HARDENED IRHYB67230CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYB67230CM 100K Rads (Si) 0.13 16A IRHYB63230CM 300K Rads (Si) 0.13 16ALow-OhmicTO-257AA TablessInternational Rectifiers R6TM technology providessuperior power MOSFETs for space applications.These d

 9.1. Size:191K  international rectifier
 irhyb597034cm.pdf pdf_icon

IRHYB67134CM

PD-97000RADIATION HARDENED IRHYB597034CMPOWER MOSFET60V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA)TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHYB597034CM 100K Rads (Si) 0.087 -20A IRHYB593034CM 300K Rads (Si) 0.087 -20ALow-OhmicTO-257AA (Tab-less)International Rectifiers R5TM technology providesFeatures:high performance

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQU6N40CTU | FDMS2572 | SWD740D | IRFB7446G

Keywords - IRHYB67134CM MOSFET datasheet

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