IRHYB67230CM Specs and Replacement

Type Designator: IRHYB67230CM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 206 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO257AA

IRHYB67230CM substitution

- MOSFET ⓘ Cross-Reference Search

 

IRHYB67230CM datasheet

 ..1. Size:190K  international rectifier
 irhyb67230cm.pdf pdf_icon

IRHYB67230CM

PD-95818D RADIATION HARDENED IRHYB67230CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYB67230CM 100K Rads (Si) 0.13 16A IRHYB63230CM 300K Rads (Si) 0.13 16A Low-Ohmic TO-257AA Tabless International Rectifier s R6TM technology provides superior power MOSFETs for space applications. These d... See More ⇒

 7.1. Size:184K  international rectifier
 irhyb67130cm.pdf pdf_icon

IRHYB67230CM

PD-95841B RADIATION HARDENED IRHYB67130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYB67130CM 100K Rads (Si) 0.042 20A* IRHYB63130CM 300K Rads (Si) 0.042 20A* Low-Ohmic TO-257AA Tabless International Rectifier s R6TM technology provides superior power MOSFETs for space applications. The... See More ⇒

 7.2. Size:188K  international rectifier
 irhyb67134cm.pdf pdf_icon

IRHYB67230CM

PD-96997A RADIATION HARDENED IRHYB67134CM POWER MOSFET 150V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYB67134CM 100K Rads (Si) 0.090 19A IRHYB63134CM 300K Rads (Si) 0.090 19A Low-Ohmic TO-257AA Tabless International Rectifier s R6TM technology provides superior power MOSFETs for space applications. These... See More ⇒

 9.1. Size:191K  international rectifier
 irhyb597034cm.pdf pdf_icon

IRHYB67230CM

PD-97000 RADIATION HARDENED IRHYB597034CM POWER MOSFET 60V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHYB597034CM 100K Rads (Si) 0.087 -20A IRHYB593034CM 300K Rads (Si) 0.087 -20A Low-Ohmic TO-257AA (Tab-less) International Rectifier s R5TM technology provides Features high performance ... See More ⇒

SHOW MORE

Detailed specifications: IRHY7130CM, IRHY7230CM, IRHY9130CM, IRHY9230CM, IRHYB597034CM, IRHYB597Z30CM, IRHYB67130CM, IRHYB67134CM, IRFB4227, IRHYK57133CMSE, IRHYS597034CM, IRHYS597Z30CM, IRHYS67130CM, IRHYS67134CM, IRHYS67230CM, IRHYS67234CM, IRHN57250SE

Keywords - IRHYB67230CM MOSFET specs

 IRHYB67230CM cross reference

 IRHYB67230CM equivalent finder

 IRHYB67230CM pdf lookup

 IRHYB67230CM substitution

 IRHYB67230CM replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs