IRHYK57133CMSE MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHYK57133CMSE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 130 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 285 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
Package: TO257AA
IRHYK57133CMSE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHYK57133CMSE Datasheet (PDF)
..1. Size:190K international rectifier
irhyk57133cmse.pdf
irhyk57133cmse.pdf
PD - 96898RADIATION HARDENED IRHYK57133CMSEPOWER MOSFET130V, N-CHANNELSURFACE MOUNT (Low-Ohmic TO-257AA)55 TECHNOLOGY Product SummaryPart Number Radiation Level RDS(on) ID IRHYK57133CMSE 100K Rads (Si) 0.082 20ALow-OhmicTO-257AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for spacen Low RDS(on)applic
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
