IRHYK57133CMSE Specs and Replacement

Type Designator: IRHYK57133CMSE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 130 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: TO257AA

IRHYK57133CMSE substitution

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IRHYK57133CMSE datasheet

 ..1. Size:190K  international rectifier
 irhyk57133cmse.pdf pdf_icon

IRHYK57133CMSE

PD - 96898 RADIATION HARDENED IRHYK57133CMSE POWER MOSFET 130V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-257AA) 5 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYK57133CMSE 100K Rads (Si) 0.082 20A Low-Ohmic TO-257AA International Rectifier s R5TM technology provides Features high performance power MOSFETs for space n Low RDS(on) applic... See More ⇒

Detailed specifications: IRHY7230CM, IRHY9130CM, IRHY9230CM, IRHYB597034CM, IRHYB597Z30CM, IRHYB67130CM, IRHYB67134CM, IRHYB67230CM, IRF3710, IRHYS597034CM, IRHYS597Z30CM, IRHYS67130CM, IRHYS67134CM, IRHYS67230CM, IRHYS67234CM, IRHN57250SE, IRHN7054

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