All MOSFET. IRHYK57133CMSE Datasheet

 

IRHYK57133CMSE Datasheet and Replacement


   Type Designator: IRHYK57133CMSE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 130 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: TO257AA
 

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IRHYK57133CMSE Datasheet (PDF)

 ..1. Size:190K  international rectifier
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IRHYK57133CMSE

PD - 96898RADIATION HARDENED IRHYK57133CMSEPOWER MOSFET130V, N-CHANNELSURFACE MOUNT (Low-Ohmic TO-257AA)55 TECHNOLOGY Product SummaryPart Number Radiation Level RDS(on) ID IRHYK57133CMSE 100K Rads (Si) 0.082 20ALow-OhmicTO-257AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for spacen Low RDS(on)applic

Datasheet: IRHY7230CM , IRHY9130CM , IRHY9230CM , IRHYB597034CM , IRHYB597Z30CM , IRHYB67130CM , IRHYB67134CM , IRHYB67230CM , P55NF06 , IRHYS597034CM , IRHYS597Z30CM , IRHYS67130CM , IRHYS67134CM , IRHYS67230CM , IRHYS67234CM , IRHN57250SE , IRHN7054 .

History: NCE0106AR | STS4DNF30L | SFF40N30N | HFP3N80 | R5019ANJ | P2806BV

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