All MOSFET. IRHN57250SE Datasheet

 

IRHN57250SE Datasheet and Replacement


   Type Designator: IRHN57250SE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 628 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO276AB
 

 IRHN57250SE substitution

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IRHN57250SE Datasheet (PDF)

 ..1. Size:175K  international rectifier
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IRHN57250SE

PD-94236CRADIATION HARDENED IRHN57250SEPOWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-1) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHN57250SE 100K Rads (Si) 0.06 31ASMD-1International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for spacen Single Event Effect (SEE) Hardenedapplications. These de

Datasheet: IRHYB67230CM , IRHYK57133CMSE , IRHYS597034CM , IRHYS597Z30CM , IRHYS67130CM , IRHYS67134CM , IRHYS67230CM , IRHYS67234CM , 7N65 , IRHN7054 , IRHN7130 , IRHN7150 , IRHN7230 , IRHN7250 , IRHN7250SE , IRHN7450 , IRHN7450SE .

History: SQD100N04-3M6

Keywords - IRHN57250SE MOSFET datasheet

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