IRHN57250SE Specs and Replacement

Type Designator: IRHN57250SE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 628 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO276AB

IRHN57250SE substitution

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IRHN57250SE datasheet

 ..1. Size:175K  international rectifier
 irhn57250se.pdf pdf_icon

IRHN57250SE

PD-94236C RADIATION HARDENED IRHN57250SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-1) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHN57250SE 100K Rads (Si) 0.06 31A SMD-1 International Rectifier s R5TM technology provides Features high performance power MOSFETs for space n Single Event Effect (SEE) Hardened applications. These de... See More ⇒

Detailed specifications: IRHYB67230CM, IRHYK57133CMSE, IRHYS597034CM, IRHYS597Z30CM, IRHYS67130CM, IRHYS67134CM, IRHYS67230CM, IRHYS67234CM, 7N65, IRHN7054, IRHN7130, IRHN7150, IRHN7230, IRHN7250, IRHN7250SE, IRHN7450, IRHN7450SE

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs