IRH7130 Specs and Replacement

Type Designator: IRH7130

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO3

IRH7130 substitution

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IRH7130 datasheet

 ..1. Size:462K  international rectifier
 irh7130.pdf pdf_icon

IRH7130

PD - 90676D IRH7130 IRH7130 IRH7130 RADIATION HARDENED IRH7130 RADIATION HARDENED IRH7130 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOL... See More ⇒

 9.1. Size:272K  international rectifier
 irh7150.pdf pdf_icon

IRH7130

PD - 90677D IRH7150 RADIATION HARDENED POWER MOSFET 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY THRU-HOLE (T0-204) Product Summary Part Number Radiation Level RDS(on) ID IRH7150 100K Rads (Si) 0.065 34A IRH3150 300K Rads (Si) 0.065 34A IRH4150 600K Rads (Si) 0.065 34A IRH8150 1000K Rads (Si) 0.065 34A TO-204AE International Rectifier s RADHard HEXFET technol... See More ⇒

Detailed specifications: IRHMS597160, IRHMS597260, IRHMS597Z60, IRHMS67160, IRHMS67164, IRHMS67260, IRHMS67264, IRH7054, EMB04N03H, IRH7150, IRH7230, IRH7250, IRH7250SE, IRH7450, IRH7450SE, IRH9130, IRH9150

Keywords - IRH7130 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.