IRH7150 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRH7150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 34 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 190 nS
Drain-Source Capacitance (Cd): 1200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm
Package: TO3
IRH7150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRH7150 Datasheet (PDF)
1.1. irh7150.pdf 
Size:272K _international_rectifier
PD - 90677D IRH7150 RADIATION HARDENED POWER MOSFET 100V, N-CHANNEL ® RAD Hard™ HEXFET TECHNOLOGY THRU-HOLE (T0-204) Product Summary Part Number Radiation Level RDS(on) ID IRH7150 100K Rads (Si) 0.065Ω 34A IRH3150 300K Rads (Si) 0.065Ω 34A IRH4150 600K Rads (Si) 0.065Ω 34A IRH8150 1000K Rads (Si) 0.065Ω 34A TO-204AE International Rectifier’s RADHard HEXFET® technol
5.1. irh7130.pdf Size:462K _international_rectifier
PD - 90676D IRH7130 IRH7130 IRH7130 RADIATION HARDENED IRH7130 RADIATION HARDENED IRH7130 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET ® RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOL
Datasheet: IRHMS597260 , IRHMS597Z60 , IRHMS67160 , IRHMS67164 , IRHMS67260 , IRHMS67264 , IRH7054 , IRH7130 , IRF8010 , IRH7230 , IRH7250 , IRH7250SE , IRH7450 , IRH7450SE , IRH9130 , IRH9150 , IRH9230 .
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