IRH7150 Specs and Replacement

Type Designator: IRH7150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO3

IRH7150 substitution

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IRH7150 datasheet

 ..1. Size:272K  international rectifier
 irh7150.pdf pdf_icon

IRH7150

PD - 90677D IRH7150 RADIATION HARDENED POWER MOSFET 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY THRU-HOLE (T0-204) Product Summary Part Number Radiation Level RDS(on) ID IRH7150 100K Rads (Si) 0.065 34A IRH3150 300K Rads (Si) 0.065 34A IRH4150 600K Rads (Si) 0.065 34A IRH8150 1000K Rads (Si) 0.065 34A TO-204AE International Rectifier s RADHard HEXFET technol... See More ⇒

 9.1. Size:462K  international rectifier
 irh7130.pdf pdf_icon

IRH7150

PD - 90676D IRH7130 IRH7130 IRH7130 RADIATION HARDENED IRH7130 RADIATION HARDENED IRH7130 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOL... See More ⇒

Detailed specifications: IRHMS597260, IRHMS597Z60, IRHMS67160, IRHMS67164, IRHMS67260, IRHMS67264, IRH7054, IRH7130, RU7088R, IRH7230, IRH7250, IRH7250SE, IRH7450, IRH7450SE, IRH9130, IRH9150, IRH9230

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.