IRH7150 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRH7150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 34 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 35 nC
trⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 1200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO3
IRH7150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRH7150 Datasheet (PDF)
irh7150.pdf
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PD - 90677DIRH7150RADIATION HARDENEDPOWER MOSFET100V, N-CHANNELRAD Hard HEXFET TECHNOLOGYTHRU-HOLE (T0-204)Product Summary Part Number Radiation Level RDS(on) IDIRH7150 100K Rads (Si) 0.065 34AIRH3150 300K Rads (Si) 0.065 34AIRH4150 600K Rads (Si) 0.065 34AIRH8150 1000K Rads (Si) 0.065 34ATO-204AEInternational Rectifiers RADHard HEXFET technol
irh7130.pdf
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PD - 90676DIRH7130IRH7130IRH7130RADIATION HARDENED IRH7130RADIATION HARDENED IRH7130RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOL
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100