IRFMA450 Specs and Replacement

Type Designator: IRFMA450

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.415 Ohm

Package: TO254AA

IRFMA450 substitution

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IRFMA450 datasheet

 ..1. Size:162K  international rectifier
 irfma450.pdf pdf_icon

IRFMA450

PD - 94362 IRFMA450 POWER MOSFET 500V, N-CHANNEL THRU-HOLE (Tabless TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 12A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- Tabless TO-254AA sistance combined with hi... See More ⇒

Detailed specifications: IRFM220BTFFP001, IRFM250D, IRFM254, IRFM260, IRFM3205, IRFM450, IRFM5210, IRFM540, IRF640N, IRFMG40, IRFMG50, IRFMJ044, IRFML8244TRPBF, IRFN044SMD, IRFN054SMD, IRFN130SMD, IRFN130SMD05

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