All MOSFET. IRFMA450 Datasheet

 

IRFMA450 Datasheet and Replacement


   Type Designator: IRFMA450
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.415 Ohm
   Package: TO254AA
 

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IRFMA450 Datasheet (PDF)

 ..1. Size:162K  international rectifier
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IRFMA450

PD - 94362IRFMA450POWER MOSFET500V, N-CHANNELTHRU-HOLE (Tabless TO-254AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFMA450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-Tabless TO-254AAsistance combined with hi

Datasheet: IRFM220BTFFP001 , IRFM250D , IRFM254 , IRFM260 , IRFM3205 , IRFM450 , IRFM5210 , IRFM540 , IRF630 , IRFMG40 , IRFMG50 , IRFMJ044 , IRFML8244TRPBF , IRFN044SMD , IRFN054SMD , IRFN130SMD , IRFN130SMD05 .

History: SI4622DY | VBZL80N03

Keywords - IRFMA450 MOSFET datasheet

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