All MOSFET. IRFMA450 Datasheet

 

IRFMA450 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFMA450
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.415 Ohm
   Package: TO254AA

 IRFMA450 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFMA450 Datasheet (PDF)

 ..1. Size:162K  international rectifier
 irfma450.pdf

IRFMA450 IRFMA450

PD - 94362IRFMA450POWER MOSFET500V, N-CHANNELTHRU-HOLE (Tabless TO-254AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFMA450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-Tabless TO-254AAsistance combined with hi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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