All MOSFET. IRFMG40 Datasheet

 

IRFMG40 Datasheet and Replacement


   Type Designator: IRFMG40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO254AA
 

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IRFMG40 Datasheet (PDF)

 ..1. Size:472K  international rectifier
 irfmg40.pdf pdf_icon

IRFMG40

PD - 90710BIRFMG40POWER MOSFET1000V, N-CHANNELTHRU-HOLE (TO-254AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFMG40 3.5 3.9AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-TO-254AAsistance combined with high transconductanc

 9.1. Size:193K  international rectifier
 irfmg50.pdf pdf_icon

IRFMG40

PD-90711C IRFMG50POWER MOSFET1000V, N-CHANNELTHRU-HOLE (TO-254AA)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) IDIRFMG50 2.0 5.6AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-254AAThe efficient geometry design achieves very low on-stateresistance combined with high transconductance.

Datasheet: IRFM250D , IRFM254 , IRFM260 , IRFM3205 , IRFM450 , IRFM5210 , IRFM540 , IRFMA450 , 10N60 , IRFMG50 , IRFMJ044 , IRFML8244TRPBF , IRFN044SMD , IRFN054SMD , IRFN130SMD , IRFN130SMD05 , IRFN140SMD .

History: AOE6932 | AP4543GEH-HF | PDN2309S | NCE60N1K0I | TSM75N75CZ

Keywords - IRFMG40 MOSFET datasheet

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