IRFMG40 Specs and Replacement

Type Designator: IRFMG40

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: TO254AA

IRFMG40 substitution

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IRFMG40 datasheet

 ..1. Size:472K  international rectifier
 irfmg40.pdf pdf_icon

IRFMG40

PD - 90710B IRFMG40 POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMG40 3.5 3.9A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- TO-254AA sistance combined with high transconductanc... See More ⇒

 9.1. Size:193K  international rectifier
 irfmg50.pdf pdf_icon

IRFMG40

PD-90711C IRFMG50 POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMG50 2.0 5.6A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-254AA The efficient geometry design achieves very low on-state resistance combined with high transconductance.... See More ⇒

Detailed specifications: IRFM250D, IRFM254, IRFM260, IRFM3205, IRFM450, IRFM5210, IRFM540, IRFMA450, IRFP260N, IRFMG50, IRFMJ044, IRFML8244TRPBF, IRFN044SMD, IRFN054SMD, IRFN130SMD, IRFN130SMD05, IRFN140SMD

Keywords - IRFMG40 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.