IRFMG50 Specs and Replacement
Type Designator: IRFMG50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO254AA
IRFMG50 substitution
- MOSFET ⓘ Cross-Reference Search
IRFMG50 datasheet
irfmg50.pdf
PD-90711C IRFMG50 POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMG50 2.0 5.6A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-254AA The efficient geometry design achieves very low on-state resistance combined with high transconductance.... See More ⇒
irfmg40.pdf
PD - 90710B IRFMG40 POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMG40 3.5 3.9A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- TO-254AA sistance combined with high transconductanc... See More ⇒
Detailed specifications: IRFM254, IRFM260, IRFM3205, IRFM450, IRFM5210, IRFM540, IRFMA450, IRFMG40, AO3400, IRFMJ044, IRFML8244TRPBF, IRFN044SMD, IRFN054SMD, IRFN130SMD, IRFN130SMD05, IRFN140SMD, IRFN150SMD
Keywords - IRFMG50 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
