All MOSFET. IRFMG50 Datasheet

 

IRFMG50 Datasheet and Replacement


   Type Designator: IRFMG50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO254AA
 

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IRFMG50 Datasheet (PDF)

 ..1. Size:193K  international rectifier
 irfmg50.pdf pdf_icon

IRFMG50

PD-90711C IRFMG50POWER MOSFET1000V, N-CHANNELTHRU-HOLE (TO-254AA)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) IDIRFMG50 2.0 5.6AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-254AAThe efficient geometry design achieves very low on-stateresistance combined with high transconductance.

 9.1. Size:472K  international rectifier
 irfmg40.pdf pdf_icon

IRFMG50

PD - 90710BIRFMG40POWER MOSFET1000V, N-CHANNELTHRU-HOLE (TO-254AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFMG40 3.5 3.9AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-TO-254AAsistance combined with high transconductanc

Datasheet: IRFM254 , IRFM260 , IRFM3205 , IRFM450 , IRFM5210 , IRFM540 , IRFMA450 , IRFMG40 , IRF3710 , IRFMJ044 , IRFML8244TRPBF , IRFN044SMD , IRFN054SMD , IRFN130SMD , IRFN130SMD05 , IRFN140SMD , IRFN150SMD .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - IRFMG50 MOSFET datasheet

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