All MOSFET. IRFMJ044 Datasheet

 

IRFMJ044 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFMJ044
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: D3PAK

 IRFMJ044 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFMJ044 Datasheet (PDF)

 ..1. Size:239K  international rectifier
 irfmj044.pdf

IRFMJ044 IRFMJ044

PD-97258IRFMJ044POWER MOSFET60V, N-CHANNELSURFACE MOUNT (D3 PAK)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) IDIRFMJ044 0.04 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.D3 PAKThe efficient geometry design achieves very low on-stateresistance combined with high transconductance

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: WML11N80M3

 

 
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