All MOSFET. IRFMJ044 Datasheet

 

IRFMJ044 Datasheet and Replacement


   Type Designator: IRFMJ044
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: D3PAK
 

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IRFMJ044 Datasheet (PDF)

 ..1. Size:239K  international rectifier
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IRFMJ044

PD-97258IRFMJ044POWER MOSFET60V, N-CHANNELSURFACE MOUNT (D3 PAK)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) IDIRFMJ044 0.04 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.D3 PAKThe efficient geometry design achieves very low on-stateresistance combined with high transconductance

Datasheet: IRFM260 , IRFM3205 , IRFM450 , IRFM5210 , IRFM540 , IRFMA450 , IRFMG40 , IRFMG50 , IRFB4227 , IRFML8244TRPBF , IRFN044SMD , IRFN054SMD , IRFN130SMD , IRFN130SMD05 , IRFN140SMD , IRFN150SMD , IRFN214BTAFP001 .

History: FDB44N25TM | FDB3672 | 2P821A | FDB5645 | 2P829A9 | IRFMG40 | 2P826AC

Keywords - IRFMJ044 MOSFET datasheet

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