IRFMJ044 Specs and Replacement

Type Designator: IRFMJ044

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: D3PAK

IRFMJ044 substitution

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IRFMJ044 datasheet

 ..1. Size:239K  international rectifier
 irfmj044.pdf pdf_icon

IRFMJ044

PD-97258 IRFMJ044 POWER MOSFET 60V, N-CHANNEL SURFACE MOUNT (D3 PAK) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMJ044 0.04 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. D3 PAK The efficient geometry design achieves very low on-state resistance combined with high transconductance... See More ⇒

Detailed specifications: IRFM260, IRFM3205, IRFM450, IRFM5210, IRFM540, IRFMA450, IRFMG40, IRFMG50, IRFB4227, IRFML8244TRPBF, IRFN044SMD, IRFN054SMD, IRFN130SMD, IRFN130SMD05, IRFN140SMD, IRFN150SMD, IRFN214BTAFP001

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