IRFN5210 Specs and Replacement
Type Designator: IRFN5210
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 86 nS
Cossⓘ - Output Capacitance: 790 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SMD1
IRFN5210 substitution
- MOSFET ⓘ Cross-Reference Search
IRFN5210 datasheet
irfn5210.pdf
P-CHANNEL POWER MOSFET IRFN5210 Low RDS(on) Power MOSFET Transistor, Fully Avalanche Rated Hermetic Ceramic Surface Mount package Designed For Fast Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage -100V VGS Gate Source Voltage 20V ID Tc = 25 C Continuou... See More ⇒
Detailed specifications: IRFN140SMD, IRFN150SMD, IRFN214BTAFP001, IRFN240SMD, IRFN250SMD, IRFN254, IRFN340SMD, IRFN3710, STP75NF75, IRFN9130SMD05, IRFN9530, IRFNG40, IRFNG50, IRFNJ130, IRFNJ5305, IRFNJ540, IRFNJ9130
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
