All MOSFET. IRFN5210 Datasheet

 

IRFN5210 Datasheet and Replacement


   Type Designator: IRFN5210
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 86 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SMD1
 

 IRFN5210 substitution

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IRFN5210 Datasheet (PDF)

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IRFN5210

P-CHANNEL POWER MOSFET IRFN5210 Low RDS(on) Power MOSFET Transistor, Fully Avalanche Rated Hermetic Ceramic Surface Mount package Designed For Fast Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage -100V VGS Gate Source Voltage 20V ID Tc = 25C Continuou

Datasheet: IRFN140SMD , IRFN150SMD , IRFN214BTAFP001 , IRFN240SMD , IRFN250SMD , IRFN254 , IRFN340SMD , IRFN3710 , STP75NF75 , IRFN9130SMD05 , IRFN9530 , IRFNG40 , IRFNG50 , IRFNJ130 , IRFNJ5305 , IRFNJ540 , IRFNJ9130 .

History: IPS65R950C6

Keywords - IRFN5210 MOSFET datasheet

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