IRFNG40 Specs and Replacement
Type Designator: IRFNG40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SMD1
IRFNG40 substitution
- MOSFET ⓘ Cross-Reference Search
IRFNG40 datasheet
irfng40.pdf
PD - 91555A IRFNG40 POWER MOSFET 1000V, N-CHANNEL SURFACE MOUNT (SMD-1) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFNG40 3.5 3.9A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- SMD-1 sistance combined with high transconductance.... See More ⇒
irfng50.pdf
PD - 91556A IRFNG50 POWER MOSFET 1000V, N-CHANNEL SURFACE MOUNT (SMD-1) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFNG50 2.0 5.5A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- SMD-1 sistance combined with high transconductance.... See More ⇒
Detailed specifications: IRFN240SMD, IRFN250SMD, IRFN254, IRFN340SMD, IRFN3710, IRFN5210, IRFN9130SMD05, IRFN9530, IRF4905, IRFNG50, IRFNJ130, IRFNJ5305, IRFNJ540, IRFNJ9130, IRFNJZ48, IRFNL210BTAFP001, IRFIZ14G
Keywords - IRFNG40 MOSFET specs
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