IRFNL210BTAFP001 Specs and Replacement

Type Designator: IRFNL210BTAFP001

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO92L

IRFNL210BTAFP001 substitution

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IRFNL210BTAFP001 datasheet

 3.1. Size:678K  fairchild semi
 irfnl210bta fp001.pdf pdf_icon

IRFNL210BTAFP001

IRFNL210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast switching mi... See More ⇒

Detailed specifications: IRFN9530, IRFNG40, IRFNG50, IRFNJ130, IRFNJ5305, IRFNJ540, IRFNJ9130, IRFNJZ48, SKD502T, IRFIZ14G, IRFIZ14GPBF, IRFIZ24EPBF, IRFIZ24G, IRFIZ24GPBF, IRFIZ24NPBF, IRFIZ34G, IRFIZ34GPBF

Keywords - IRFNL210BTAFP001 MOSFET specs

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