All MOSFET. IRFNL210BTAFP001 Datasheet

 

IRFNL210BTAFP001 Datasheet and Replacement


   Type Designator: IRFNL210BTAFP001
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO92L
 

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IRFNL210BTAFP001 Datasheet (PDF)

 3.1. Size:678K  fairchild semi
 irfnl210bta fp001.pdf pdf_icon

IRFNL210BTAFP001

IRFNL210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored to Fast switchingmi

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History: STFI7N80K5

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