All MOSFET. IXZR16N60B Datasheet

 

IXZR16N60B MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXZR16N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 350 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.6 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 42 nC
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: ISOPLUS247

 IXZR16N60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXZR16N60B Datasheet (PDF)

 ..1. Size:163K  ixys
 ixzr16n60a ixzr16n60b.pdf

IXZR16N60B IXZR16N60B

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56

 9.1. Size:160K  ixys
 ixzr18n50a ixzr18n50b.pdf

IXZR16N60B IXZR16N60B

IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) 0.37 Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 500 V PDC = 350 W TJ = 25C to 150C; RGS

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