IXZR16N60B Specs and Replacement

Type Designator: IXZR16N60B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 350 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm

Package: ISOPLUS247

IXZR16N60B substitution

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IXZR16N60B datasheet

 ..1. Size:163K  ixys
 ixzr16n60a ixzr16n60b.pdf pdf_icon

IXZR16N60B

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56 ... See More ⇒

 9.1. Size:160K  ixys
 ixzr18n50a ixzr18n50b.pdf pdf_icon

IXZR16N60B

IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) 0.37 Symbol Test Conditions Maximum Ratings TJ = 25 C to 150 C VDSS 500 V PDC = 350 W TJ = 25 C to 150 C; RGS ... See More ⇒

Detailed specifications: IRFP31N50LPBF, IRFP3206PBF, IRFP32N50K, IRFP32N50KPBF, IRFP3306PBF, IRFP340PBF, IXZR18N50B, IXZR18N50A, STP80NF70, IXZR16N60A, IXZR08N120B, IXZR08N120A, IXZH10N50LB, IXZH10N50LA, IXZ318N50, IXZ316N60, IXZ308N120

Keywords - IXZR16N60B MOSFET specs

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