All MOSFET. IXZH10N50LB Datasheet

 

IXZH10N50LB Datasheet and Replacement


   Type Designator: IXZH10N50LB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-247AD
 

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IXZH10N50LB Datasheet (PDF)

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 ixzh10n50la ixzh10n50lb.pdf pdf_icon

IXZH10N50LB

IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation in Common Source Mode 150V (operating) Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 500 VTJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VG

Datasheet: IRFP3306PBF , IRFP340PBF , IXZR18N50B , IXZR18N50A , IXZR16N60B , IXZR16N60A , IXZR08N120B , IXZR08N120A , 18N50 , IXZH10N50LA , IXZ318N50 , IXZ316N60 , IXZ308N120 , IXZ2210N50L , IXZ210N50L , IXUN350N10 , IXUC200N055 .

History: NVMTS0D6N04C

Keywords - IXZH10N50LB MOSFET datasheet

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