All MOSFET. IXZH10N50LB Datasheet

 

IXZH10N50LB MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXZH10N50LB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.95 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-247AD

 IXZH10N50LB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXZH10N50LB Datasheet (PDF)

 ..1. Size:261K  ixys
 ixzh10n50la ixzh10n50lb.pdf

IXZH10N50LB IXZH10N50LB

IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation in Common Source Mode 150V (operating) Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 500 VTJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VG

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top