IXZ308N120 Specs and Replacement

Type Designator: IXZ308N120

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 880 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: SMD-6

IXZ308N120 substitution

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IXZ308N120 datasheet

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IXZ308N120

IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Lo Capacitance Z-MOSTMTM MOSFET Process Low Capacitance Z-MOS MOSFET Process VDSS = 1200 V Optimized for Linear Operation Optimized for RF Operation Ideal for Class ABD, & Broadcast & Communications Applications Ideal for Class C, & C,E Applicat... See More ⇒

Detailed specifications: IXZR16N60B, IXZR16N60A, IXZR08N120B, IXZR08N120A, IXZH10N50LB, IXZH10N50LA, IXZ318N50, IXZ316N60, 2SK3568, IXZ2210N50L, IXZ210N50L, IXUN350N10, IXUC200N055, IXUC100N055, IXTY90N055T2, IXTY8N65X2, IXTY4N65X2

Keywords - IXZ308N120 MOSFET specs

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