All MOSFET. IXZ308N120 Datasheet

 

IXZ308N120 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXZ308N120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 880 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 59 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: SMD-6

 IXZ308N120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXZ308N120 Datasheet (PDF)

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 ixz308n120.pdf

IXZ308N120 IXZ308N120

IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFETLo Capacitance Z-MOSTMTM MOSFET Process Low Capacitance Z-MOS MOSFET Process VDSS = 1200 V Optimized for Linear Operation Optimized for RF Operation Ideal for Class ABD, & Broadcast & Communications Applications Ideal for Class C, & C,E Applicat

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