All MOSFET. IXZ308N120 Datasheet

 

IXZ308N120 Datasheet and Replacement


   Type Designator: IXZ308N120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 880 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: SMD-6
 

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IXZ308N120 Datasheet (PDF)

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IXZ308N120

IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFETLo Capacitance Z-MOSTMTM MOSFET Process Low Capacitance Z-MOS MOSFET Process VDSS = 1200 V Optimized for Linear Operation Optimized for RF Operation Ideal for Class ABD, & Broadcast & Communications Applications Ideal for Class C, & C,E Applicat

Datasheet: IXZR16N60B , IXZR16N60A , IXZR08N120B , IXZR08N120A , IXZH10N50LB , IXZH10N50LA , IXZ318N50 , IXZ316N60 , AO3401 , IXZ2210N50L , IXZ210N50L , IXUN350N10 , IXUC200N055 , IXUC100N055 , IXTY90N055T2 , IXTY8N65X2 , IXTY4N65X2 .

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