All MOSFET. IXZ210N50L Datasheet

 

IXZ210N50L Datasheet and Replacement


   Type Designator: IXZ210N50L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 470 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 77 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SMD-6
 

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IXZ210N50L Datasheet (PDF)

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IXZ210N50L

IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications 150V (operating) Note: All data is per the IXZ210N50L single ended device unless otherwise noted. 300 & 550 Watts Symbol Tes

Datasheet: IXZR08N120B , IXZR08N120A , IXZH10N50LB , IXZH10N50LA , IXZ318N50 , IXZ316N60 , IXZ308N120 , IXZ2210N50L , 13N50 , IXUN350N10 , IXUC200N055 , IXUC100N055 , IXTY90N055T2 , IXTY8N65X2 , IXTY4N65X2 , IXTY2N65X2 , IXTY1R4N120P .

History: NCE6080EK | PMPB20XPEA | 2N65G-TN3-T | SSM3K336R | SRC65R040B | MTP9435Q8 | AOC2870

Keywords - IXZ210N50L MOSFET datasheet

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