All MOSFET. IXUN350N10 Datasheet

 

IXUN350N10 Datasheet and Replacement


   Type Designator: IXUN350N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 830 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 350 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 175 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: SOT-227B
 

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IXUN350N10 Datasheet (PDF)

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IXUN350N10

IXUN350N10VDSS = 100 VTrench Power MOSFETID25 = 350 AVery low RDS(on)RDS(on) typ. = 1.9 mKSDSOT-227 B,GminiBLOCGKSSSDG = Gate, D = Drain,S = Source, KS = Kelvin SourceFeaturesMOSFET trench MOSFETSymbol Conditions Maximum Ratings very low on state resistance RDSonVDSS TVJ = 25C to 150C 100 V fast switching fast body diodeVG

Datasheet: IXZR08N120A , IXZH10N50LB , IXZH10N50LA , IXZ318N50 , IXZ316N60 , IXZ308N120 , IXZ2210N50L , IXZ210N50L , SKD502T , IXUC200N055 , IXUC100N055 , IXTY90N055T2 , IXTY8N65X2 , IXTY4N65X2 , IXTY2N65X2 , IXTY1R4N120P , IXTY1N120P .

History: HAT2080T | RU1HC2H | HM2309DR | 6N60KG-TA3-T | RU1H40L | NCEP6016AS | YJD45P03A

Keywords - IXUN350N10 MOSFET datasheet

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