IXUN350N10 Specs and Replacement

Type Designator: IXUN350N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 830 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 350 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 175 nS

Cossⓘ - Output Capacitance: 3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: SOT-227B

IXUN350N10 substitution

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IXUN350N10 datasheet

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IXUN350N10

IXUN350N10 VDSS = 100 V Trench Power MOSFET ID25 = 350 A Very low RDS(on) RDS(on) typ. = 1.9 m KS D SOT-227 B, G miniBLOC G KS S S D G = Gate, D = Drain, S = Source, KS = Kelvin Source Features MOSFET trench MOSFET Symbol Conditions Maximum Ratings very low on state resistance RDSon VDSS TVJ = 25 C to 150 C 100 V fast switching fast body diode VG... See More ⇒

Detailed specifications: IXZR08N120A, IXZH10N50LB, IXZH10N50LA, IXZ318N50, IXZ316N60, IXZ308N120, IXZ2210N50L, IXZ210N50L, RFP50N06, IXUC200N055, IXUC100N055, IXTY90N055T2, IXTY8N65X2, IXTY4N65X2, IXTY2N65X2, IXTY1R4N120P, IXTY1N120P

Keywords - IXUN350N10 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs