All MOSFET. IXUN350N10 Datasheet

 

IXUN350N10 Datasheet and Replacement


   Type Designator: IXUN350N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 830 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 350 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 175 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: SOT-227B
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IXUN350N10 Datasheet (PDF)

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IXUN350N10

IXUN350N10VDSS = 100 VTrench Power MOSFETID25 = 350 AVery low RDS(on)RDS(on) typ. = 1.9 mKSDSOT-227 B,GminiBLOCGKSSSDG = Gate, D = Drain,S = Source, KS = Kelvin SourceFeaturesMOSFET trench MOSFETSymbol Conditions Maximum Ratings very low on state resistance RDSonVDSS TVJ = 25C to 150C 100 V fast switching fast body diodeVG

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AONS36337 | 1N60L-TMS2-T | AP3P7R0EMT | R5009FNJ | NCEP6016AS | 2SK3121 | KCF3650A

Keywords - IXUN350N10 MOSFET datasheet

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