All MOSFET. IXUC200N055 Datasheet

 

IXUC200N055 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXUC200N055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 115 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
   Package: ISOPLUS-220

 IXUC200N055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXUC200N055 Datasheet (PDF)

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 ixuc200n055.pdf

IXUC200N055 IXUC200N055

ADVANCED TECHNICAL INFORMATIONTrench Power MOSFET IXUC200N055 VDSS = 55 VISOPLUS220TM ID25 = 200 AElectrically Isolated Back Surface RDS(on)= 5.1 mWISOPLUS 220TMSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 150C55 VSVGS Continuous 20 VIsolated back surface*ID25 TC = 25C; Note 1 200 A G = Gate, D = Drain,S = SourceID90 TC = 90C, Note 1 160 A* Pa

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