All MOSFET. IXUC200N055 Datasheet

 

IXUC200N055 Datasheet and Replacement


   Type Designator: IXUC200N055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 115 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
   Package: ISOPLUS-220
 

 IXUC200N055 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXUC200N055 Datasheet (PDF)

 ..1. Size:397K  ixys
 ixuc200n055.pdf pdf_icon

IXUC200N055

ADVANCED TECHNICAL INFORMATIONTrench Power MOSFET IXUC200N055 VDSS = 55 VISOPLUS220TM ID25 = 200 AElectrically Isolated Back Surface RDS(on)= 5.1 mWISOPLUS 220TMSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 150C55 VSVGS Continuous 20 VIsolated back surface*ID25 TC = 25C; Note 1 200 A G = Gate, D = Drain,S = SourceID90 TC = 90C, Note 1 160 A* Pa

Datasheet: IXZH10N50LB , IXZH10N50LA , IXZ318N50 , IXZ316N60 , IXZ308N120 , IXZ2210N50L , IXZ210N50L , IXUN350N10 , IRFZ46N , IXUC100N055 , IXTY90N055T2 , IXTY8N65X2 , IXTY4N65X2 , IXTY2N65X2 , IXTY1R4N120P , IXTY1N120P , IXTX210P10T .

History: OSG70R1K4FF | IXTA4N150HV | SLD60R380S2

Keywords - IXUC200N055 MOSFET datasheet

 IXUC200N055 cross reference
 IXUC200N055 equivalent finder
 IXUC200N055 lookup
 IXUC200N055 substitution
 IXUC200N055 replacement

 

 
Back to Top

 


 
.