IXUC200N055 Specs and Replacement

Type Designator: IXUC200N055

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm

Package: ISOPLUS-220

IXUC200N055 substitution

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IXUC200N055 datasheet

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IXUC200N055

ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC200N055 VDSS = 55 V ISOPLUS220TM ID25 = 200 A Electrically Isolated Back Surface RDS(on)= 5.1 mW ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C55 V S VGS Continuous 20 V Isolated back surface* ID25 TC = 25 C; Note 1 200 A G = Gate, D = Drain, S = Source ID90 TC = 90 C, Note 1 160 A * Pa... See More ⇒

Detailed specifications: IXZH10N50LB, IXZH10N50LA, IXZ318N50, IXZ316N60, IXZ308N120, IXZ2210N50L, IXZ210N50L, IXUN350N10, SI2302, IXUC100N055, IXTY90N055T2, IXTY8N65X2, IXTY4N65X2, IXTY2N65X2, IXTY1R4N120P, IXTY1N120P, IXTX210P10T

Keywords - IXUC200N055 MOSFET specs

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