IXTY90N055T2 Specs and Replacement

Type Designator: IXTY90N055T2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: TO-252

IXTY90N055T2 substitution

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IXTY90N055T2 datasheet

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IXTY90N055T2

TrenchT2TM IXTY90N055T2 VDSS = 55V IXTA90N055T2 ID25 = 90A Power MOSFETs IXTP90N055T2 RDS(on) 8.4m N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C55 V S VDGR TJ = 25 C to 175 C, RGS = 1M 55 V D (Tab) VGSM Transient 20 V TO-220AB ... See More ⇒

Detailed specifications: IXZ318N50, IXZ316N60, IXZ308N120, IXZ2210N50L, IXZ210N50L, IXUN350N10, IXUC200N055, IXUC100N055, 18N50, IXTY8N65X2, IXTY4N65X2, IXTY2N65X2, IXTY1R4N120P, IXTY1N120P, IXTX210P10T, IXTX20N150, IXTX120P20T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.