All MOSFET. IXTY90N055T2 Datasheet

 

IXTY90N055T2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTY90N055T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TO-252

 IXTY90N055T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTY90N055T2 Datasheet (PDF)

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 ixty90n055t2.pdf

IXTY90N055T2 IXTY90N055T2

TrenchT2TM IXTY90N055T2 VDSS = 55VIXTA90N055T2 ID25 = 90APower MOSFETs IXTP90N055T2 RDS(on) 8.4m N-Channel Enhancement ModeAvalanche RatedTO-252 (IXTY)GSD (Tab)TO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C55 VSVDGR TJ = 25C to 175C, RGS = 1M 55 VD (Tab)VGSM Transient 20 VTO-220AB

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HGA059N08A

 

 
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