All MOSFET. IXTY90N055T2 Datasheet

 

IXTY90N055T2 Datasheet and Replacement


   Type Designator: IXTY90N055T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TO-252
 

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IXTY90N055T2 Datasheet (PDF)

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IXTY90N055T2

TrenchT2TM IXTY90N055T2 VDSS = 55VIXTA90N055T2 ID25 = 90APower MOSFETs IXTP90N055T2 RDS(on) 8.4m N-Channel Enhancement ModeAvalanche RatedTO-252 (IXTY)GSD (Tab)TO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C55 VSVDGR TJ = 25C to 175C, RGS = 1M 55 VD (Tab)VGSM Transient 20 VTO-220AB

Datasheet: IXZ318N50 , IXZ316N60 , IXZ308N120 , IXZ2210N50L , IXZ210N50L , IXUN350N10 , IXUC200N055 , IXUC100N055 , 75N75 , IXTY8N65X2 , IXTY4N65X2 , IXTY2N65X2 , IXTY1R4N120P , IXTY1N120P , IXTX210P10T , IXTX20N150 , IXTX120P20T .

History: KHB9D0N50P1 | DATD063N06N | IXUC200N055 | IXTV230N085TS | STS65R580FS2 | 2N65L-TF2-T | CEM1010

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