IXTY8N65X2 Specs and Replacement

Type Designator: IXTY8N65X2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 495 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-252

IXTY8N65X2 substitution

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IXTY8N65X2 datasheet

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 ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf pdf_icon

IXTY8N65X2

Preliminary Technical Information X2-Class VDSS = 650V IXTY8N65X2 Power MOSFET ID25 = 8A IXTA8N65X2 RDS(on) 500m IXTP8N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G... See More ⇒

Detailed specifications: IXZ316N60, IXZ308N120, IXZ2210N50L, IXZ210N50L, IXUN350N10, IXUC200N055, IXUC100N055, IXTY90N055T2, 20N50, IXTY4N65X2, IXTY2N65X2, IXTY1R4N120P, IXTY1N120P, IXTX210P10T, IXTX20N150, IXTX120P20T, IXTX120N65X2

Keywords - IXTY8N65X2 MOSFET specs

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