All MOSFET. IXTY8N65X2 Datasheet

 

IXTY8N65X2 Datasheet and Replacement


   Type Designator: IXTY8N65X2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 495 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-252
 

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IXTY8N65X2 Datasheet (PDF)

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IXTY8N65X2

Preliminary Technical InformationX2-Class VDSS = 650VIXTY8N65X2Power MOSFET ID25 = 8AIXTA8N65X2 RDS(on) 500m IXTP8N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG

Datasheet: IXZ316N60 , IXZ308N120 , IXZ2210N50L , IXZ210N50L , IXUN350N10 , IXUC200N055 , IXUC100N055 , IXTY90N055T2 , 20N50 , IXTY4N65X2 , IXTY2N65X2 , IXTY1R4N120P , IXTY1N120P , IXTX210P10T , IXTX20N150 , IXTX120P20T , IXTX120N65X2 .

History: IPB65R190C7 | NCE55H12 | NCE55P15I | 12N60L-T2Q-T | 12N60G-TF3-T | IPB65R150CFDA

Keywords - IXTY8N65X2 MOSFET datasheet

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