IXTY2N65X2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTY2N65X2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 129 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-252
IXTY2N65X2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTY2N65X2 Datasheet (PDF)
ixtp2n65x2 ixty2n65x2.pdf
Preliminary Technical InformationX2-Class VDSS = 650VIXTY2N65X2Power MOSFET ID25 = 2AIXTP2N65X2 RDS(on) 2.3 N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient
ixtp2r4n50p ixty2r4n50p.pdf
IXTP 2R4N50P VDSS = 500 VPolarHVTMIXTY 2R4N50P ID25 = 2.4 APower MOSFET RDS(on) 3.75 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGSM Transient 40 V(TAB)GVGSM Continuous 30 V DSID25 TC = 25C 2.4 A
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
