IXTT02N450HV Specs and Replacement

Type Designator: IXTT02N450HV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 4500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 750 Ohm

Package: TO-268

IXTT02N450HV substitution

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IXTT02N450HV datasheet

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 ixta02n450hv ixtt02n450hv.pdf pdf_icon

IXTT02N450HV

Advance Technical Information High Voltage VDSS = 4500V IXTA02N450HV Power MOSFETs ID25 = 200mA IXTT02N450HV RDS(on) 750 N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4500 V TO-268 (IXTT) VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V G VGSM Trans... See More ⇒

Detailed specifications: IXTT2N300P3HV, IXTT2N170D2, IXTT1N450HV, IXTT1N300P3HV, IXTT1N250HV, IXTT140P10T, IXTT12N150HV, IXTT12N150, EMB04N03H, IXTR68P20T, IXTR210P10T, IXTR140P10T, IXTR120P20T, IXTR102N65X2, IXTQ80N28T, IXTQ32N65X, IXTQ180N055T

Keywords - IXTT02N450HV MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.