All MOSFET. IXTT02N450HV Datasheet

 

IXTT02N450HV Datasheet and Replacement


   Type Designator: IXTT02N450HV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 4500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 750 Ohm
   Package: TO-268
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IXTT02N450HV Datasheet (PDF)

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IXTT02N450HV

Advance Technical InformationHigh Voltage VDSS = 4500VIXTA02N450HVPower MOSFETsID25 = 200mAIXTT02N450HV RDS(on) 750 N-Channel Enhancement ModeTO-263 (IXTA)GS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VTO-268 (IXTT)VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VGVGSM Trans

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History: IRFI7536G | FDMS9620S | WMM11N80M3

Keywords - IXTT02N450HV MOSFET datasheet

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