All MOSFET. IXTR68P20T Datasheet

 

IXTR68P20T Datasheet and Replacement


   Type Designator: IXTR68P20T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: TO-247 ISOPLUS-247
 

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IXTR68P20T Datasheet (PDF)

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IXTR68P20T

Advance Technical InformationTrenchPTM VDSS = - 200VIXTR68P20TPower MOSFET ID25 = - 44A RDS(on) 64m P-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C - 200 VGVDGR TJ = 25C to 150C, RGS = 1M - 200 VIsolated TabDSVGSS Continuous 15 VVGSM Transient

Datasheet: IXTT2N170D2 , IXTT1N450HV , IXTT1N300P3HV , IXTT1N250HV , IXTT140P10T , IXTT12N150HV , IXTT12N150 , IXTT02N450HV , AON7403 , IXTR210P10T , IXTR140P10T , IXTR120P20T , IXTR102N65X2 , IXTQ80N28T , IXTQ32N65X , IXTQ180N055T , IXTQ130N20T .

History: AP18P10GJ

Keywords - IXTR68P20T MOSFET datasheet

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