IXTR210P10T Specs and Replacement
Type Designator: IXTR210P10T
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 158 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 98 nS
Cossⓘ - Output Capacitance: 4070 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-247 ISOPLUS-247
IXTR210P10T substitution
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IXTR210P10T datasheet
Detailed specifications: IXTT1N450HV , IXTT1N300P3HV , IXTT1N250HV , IXTT140P10T , IXTT12N150HV , IXTT12N150 , IXTT02N450HV , IXTR68P20T , MMIS60R580P , IXTR140P10T , IXTR120P20T , IXTR102N65X2 , IXTQ80N28T , IXTQ32N65X , IXTQ180N055T , IXTQ130N20T , IXTP8N65X2M .
Keywords - IXTR210P10T MOSFET specs
IXTR210P10T cross reference
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IXTR210P10T substitution
IXTR210P10T replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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