All MOSFET. IXTR210P10T Datasheet

 

IXTR210P10T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTR210P10T

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 390 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 158 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 740 nC

Rise Time (tr): 98 nS

Drain-Source Capacitance (Cd): 4070 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO-247, ISOPLUS-247

IXTR210P10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTR210P10T Datasheet (PDF)

1.1. ixtr210p10t.pdf Size:197K _ixys

IXTR210P10T
IXTR210P10T

Advance Technical Information TrenchPTM VDSS = -100V IXTR210P10T Power MOSFET ID25 = -158A ≤ Ω RDS(on) ≤ 8mΩ ≤ Ω ≤ Ω ≤ Ω P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V G VDGR TJ = 25°C to 150°C, RGS = 1MΩ -100 V Isolated Tab D S VGSS Continuous

5.1. ixtr200n10p.pdf Size:151K _ixys

IXTR210P10T
IXTR210P10T

VDSS = 100 V IXTR 200N10P PolarTM HiPerFET ID25 = 120 A Power MOSFET ? ? RDS(on) ? 8 m? ? ? ? ? ? ? Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode ISOPLUS 247TM (IXTR) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS 20 V VGSM 30 V ISOLATED TAB ID25 TC =

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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