All MOSFET. IXTR210P10T Datasheet

 

IXTR210P10T Datasheet and Replacement


   Type Designator: IXTR210P10T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 158 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 4070 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-247 ISOPLUS-247
 

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IXTR210P10T Datasheet (PDF)

 ..1. Size:197K  ixys
 ixtr210p10t.pdf pdf_icon

IXTR210P10T

Advance Technical InformationTrenchPTM VDSS = -100VIXTR210P10TPower MOSFET ID25 = -158A RDS(on) 8m P-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -100 VGVDGR TJ = 25C to 150C, RGS = 1M -100 VIsolated TabDSVGSS Continuous

 9.1. Size:151K  ixys
 ixtr200n10p.pdf pdf_icon

IXTR210P10T

VDSS = 100 VIXTR 200N10PPolarTM HiPerFETID25 = 120 APower MOSFET RDS(on) 8 m Electrically Isolated TabN-Channel Enhancement ModeAvalanche RatedFast Recovery DiodeISOPLUS 247TM (IXTR)Symbol Test Conditions Maximum Ratings E153432VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS 20 VVGSM

Datasheet: IXTT1N450HV , IXTT1N300P3HV , IXTT1N250HV , IXTT140P10T , IXTT12N150HV , IXTT12N150 , IXTT02N450HV , IXTR68P20T , STP65NF06 , IXTR140P10T , IXTR120P20T , IXTR102N65X2 , IXTQ80N28T , IXTQ32N65X , IXTQ180N055T , IXTQ130N20T , IXTP8N65X2M .

History: CSY9130

Keywords - IXTR210P10T MOSFET datasheet

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