All MOSFET. APT50M38JLL Datasheet

 

APT50M38JLL MOSFET. Datasheet pdf. Equivalent

Type Designator: APT50M38JLL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 775 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 91 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 2610 pF

Maximum Drain-Source On-State Resistance (Rds): 0.038 Ohm

Package: SOT227

APT50M38JLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

APT50M38JLL Datasheet (PDF)

1.1. apt50m38jll.pdf Size:60K _apt

APT50M38JLL
APT50M38JLL

APT50M38JLL 500V 91A 0.038 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

1.2. apt50m38jfll.pdf Size:62K _apt

APT50M38JLL
APT50M38JLL

APT50M38JFLL 500V 91A 0.038W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

4.1. apt50m50l2ll.pdf Size:63K _apt

APT50M38JLL
APT50M38JLL

APT50M50L2LL 500V 87A 0.050W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

4.2. apt50m60jn.pdf Size:60K _apt

APT50M38JLL
APT50M38JLL

D G APT50M60JN 500V 71A 0.06OΩ S "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 50M60JN UNIT VDSS Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 71 Amps IDM, lLM Pulse

4.3. apt50m65jll.pdf Size:60K _apt

APT50M38JLL
APT50M38JLL

APT50M65JLL 500V 60A 0.065 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

4.4. apt50m65.pdf Size:63K _apt

APT50M38JLL
APT50M38JLL

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

4.5. apt50m80jlc.pdf Size:34K _apt

APT50M38JLL
APT50M38JLL

APT50M80JLC 500V 52A 0.080 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT

4.6. apt50m75b2ll.pdf Size:68K _apt

APT50M38JLL
APT50M38JLL

APT50M75B2LL APT50M75LLL 500V 57A 0.075W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s

4.7. apt50m50pvr.pdf Size:36K _apt

APT50M38JLL
APT50M38JLL

APT50M50PVR 500V 74.5A 0.050Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

4.8. apt50m50jlc.pdf Size:34K _apt

APT50M38JLL
APT50M38JLL

APT50M50JLC 500V 77A 0.050 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT

4.9. apt50m85b2vfr.pdf Size:39K _apt

APT50M38JLL
APT50M38JLL

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085W B2VFR POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVFR • Identical

4.10. apt50m60l2vfr.pdf Size:79K _apt

APT50M38JLL
APT50M38JLL

APT50M60L2VFR 500V 77A 0.060W POWER MOS V® FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • Faster Switching D

4.11. apt50m65b2ll.pdf Size:68K _apt

APT50M38JLL
APT50M38JLL

APT50M65B2LL APT50M65LLL 500V 67A 0.065W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s

4.12. apt50m85jvr.pdf Size:74K _apt

APT50M38JLL
APT50M38JLL

APT50M85JVR 500V 50A 0.085Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

4.13. apt50m50.pdf Size:36K _apt

APT50M38JLL
APT50M38JLL

APT50M50PVR 500V 74.5A 0.050Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

4.14. apt50m80.pdf Size:33K _apt

APT50M38JLL
APT50M38JLL

APT50M80B2VFR 500V 58A 0.080W POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche T

4.15. apt50m75b2fll.pdf Size:63K _apt

APT50M38JLL
APT50M38JLL

APT50M75B2FLL APT50M75LFLL 500V 57A 0.075W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

4.16. apt50m50jvfr.pdf Size:73K _apt

APT50M38JLL
APT50M38JLL

APT50M50JVFR 500V 77A 0.050Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

4.17. apt50m50l2fll.pdf Size:65K _apt

APT50M38JLL
APT50M38JLL

APT50M50L2FLL 500V 89A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds

4.18. apt50m50jvr.pdf Size:71K _apt

APT50M38JLL
APT50M38JLL

APT50M50JVR 500V 77A 0.050Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

4.19. apt50m60l2vr.pdf Size:33K _apt

APT50M38JLL
APT50M38JLL

APT50M60L2VR 500V 77A 0.060W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D

4.20. apt50m75jllu2.pdf Size:124K _apt

APT50M38JLL
APT50M38JLL

APT50M75JLLU2 APT50M75JLLU2 500V 51A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inher

4.21. apt50m80b2vr.pdf Size:36K _apt

APT50M38JLL
APT50M38JLL

APT50M80B2VR APT50M80LVR 500V 58A 0.080W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificatio

4.22. apt50m80b2vfr.pdf Size:33K _apt

APT50M38JLL
APT50M38JLL

APT50M80B2VFR 500V 58A 0.080W POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche T

4.23. apt50m80b2lc.pdf Size:34K _apt

APT50M38JLL
APT50M38JLL

APT50M80B2LC APT50M80LLC 500V 58A 0.080W B2LC TM POWER MOS VI T-MAX™ Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fas

4.24. apt50m50jfll.pdf Size:71K _apt

APT50M38JLL
APT50M38JLL

APT50M50JFLL 500V 71A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

4.25. apt50m65b2fll.pdf Size:63K _apt

APT50M38JLL
APT50M38JLL

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

4.26. apt50m85b2vr.pdf Size:36K _apt

APT50M38JLL
APT50M38JLL

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificatio

4.27. apt50m75jll.pdf Size:60K _apt

APT50M38JLL
APT50M38JLL

APT50M75JLL 500V 52A 0.075 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

4.28. apt50m85jvfr.pdf Size:76K _apt

APT50M38JLL
APT50M38JLL

APT50M85JVFR 500V 50A 0.085Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

4.29. apt50m65jfll.pdf Size:63K _apt

APT50M38JLL
APT50M38JLL

APT50M65JFLL 500V 60A 0.065W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

4.30. apt50m75jfll.pdf Size:62K _apt

APT50M38JLL
APT50M38JLL

APT50M75JFLL 500V 52A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

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