All MOSFET. IXTN210P10T Datasheet

 

IXTN210P10T Datasheet and Replacement


   Type Designator: IXTN210P10T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 830 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 210 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 4070 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOT-227B
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IXTN210P10T Datasheet (PDF)

 ..1. Size:178K  ixys
 ixtn210p10t.pdf pdf_icon

IXTN210P10T

Advance Technical InformationTrenchPTM VDSS = -100VIXTN210P10TPower MOSFET ID25 = - 210A RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C -100 VDVDGR TJ = 25C to 150C, RGS = 1M

 8.1. Size:137K  ixys
 ixtk21n100 ixtn21n100.pdf pdf_icon

IXTN210P10T

IXTK 21N100 VDSS = 1000 VHigh VoltageIXTN 21N100 ID25 = 21 AMegaMOSTMFETsRDS(on) = 0.55 N-Channel, Enhancement ModeTO-264 AA (IXTK)Symbol Test Conditions Maximum RatingsIXTK IXTNVDSS TJ = 25C to 150C 1000 1000 VGD (TAB)DVDGR TJ = 25C to 150C; RGS = 1 M 1000 1000 VSVGS Continuous 20 20 VminiBLOC, SOT-227 BVGSM Transient 30

 9.1. Size:170K  ixys
 ixtn200n10l2.pdf pdf_icon

IXTN210P10T

Advance Technical Information Linear L2TM Power VDSS = 100V IXTN200N10L2 MOSFET w/ Extended ID25 = 178A FBSOA RDS(on) 11m N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C, RGS = 1M 100 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MTNK1N3 | BUZ84 | AON6794 | CED05N8 | STD6N10T4 | IRFHM792PBF | BL10N70-A

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