IXTN120P20T Datasheet. Specs and Replacement

Type Designator: IXTN120P20T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 830 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 106 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 2550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT-227B

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IXTN120P20T datasheet

 ..1. Size:177K  ixys
 ixtn120p20t.pdf pdf_icon

IXTN120P20T

Advance Technical Information TrenchPTM VDSS = - 200V IXTN120P20T Power MOSFETs ID25 = - 106A RDS(on) 30m trr 300ns P-Channel Enhancement Mode Avalanche Rated miniBLOC Fast Intrinsic Rectifier E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C - 200 V S VDGR TJ = 25 C to 150 C, RGS = 1M -... See More ⇒

 9.1. Size:170K  ixys
 ixtn110n20l2.pdf pdf_icon

IXTN120P20T

Advance Technical Information Linear L2TM Power VDSS = 200V IXTN110N20L2 MOSFET w/Extended ID25 = 100A 24m FBSOA RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C, RGS = 1M 200 V VGSS Co... See More ⇒

 9.2. Size:126K  ixys
 ixtn102n65x2.pdf pdf_icon

IXTN120P20T

Advance Technical Information X2-Class VDSS = 650V IXTN102N65X2 Power MOSFET ID25 = 76A RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated miniBLOC Fast Intrinsic Diode E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Continuous 30 V D VG... See More ⇒

Detailed specifications: IXTP2N100A, IXTP270N04T4, IXTP20N65XM, IXTP20N65X, IXTP180N055T, IXTP160N085T, IXTP12N65X2, IXTN210P10T, IRLB4132, IXTN102N65X2, IXTM7N50A, IXTM7N50, IXTM7N45A, IXTM7N45, IXTM6N60A, IXTM6N60, IXTM4N95A

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