IXTN120P20T MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTN120P20T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 830 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 106 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 740 nC
Rise Time (tr): 85 nS
Drain-Source Capacitance (Cd): 2550 pF
Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm
Package: SOT-227B
IXTN120P20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTN120P20T Datasheet (PDF)
1.1. ixtn120p20t.pdf 
Size:177K _ixys
Advance Technical Information TrenchPTM VDSS = - 200V IXTN120P20T Power MOSFETs ID25 = - 106A ≤ Ω RDS(on) ≤ 30mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 300ns ≤ ≤ ≤ P-Channel Enhancement Mode Avalanche Rated miniBLOC Fast Intrinsic Rectifier E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V S VDGR TJ = 25°C to 150°C, RGS = 1MΩ -
5.1. ixtn110n20l2.pdf Size:170K _ixys
Advance Technical Information Linear L2TM Power VDSS = 200V IXTN110N20L2 MOSFET w/Extended ID25 = 100A ? ? ? 24m? ? ? ? ? FBSOA RDS(on) ? ? N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M? 200 V VGSS Continuous 20 V S VGS
5.2. ixtn102n65x2.pdf Size:126K _ixys
Advance Technical Information X2-Class VDSS = 650V IXTN102N65X2 Power MOSFET ID25 = 76A RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated miniBLOC Fast Intrinsic Diode E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS Continuous 30 V D VG
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
