All MOSFET. IXTN120P20T Datasheet

 

IXTN120P20T Datasheet and Replacement


   Type Designator: IXTN120P20T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 830 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 106 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 2550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT-227B
 

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IXTN120P20T Datasheet (PDF)

 ..1. Size:177K  ixys
 ixtn120p20t.pdf pdf_icon

IXTN120P20T

Advance Technical InformationTrenchPTM VDSS = - 200VIXTN120P20TPower MOSFETs ID25 = - 106A RDS(on) 30m trr 300nsP-Channel Enhancement ModeAvalanche RatedminiBLOCFast Intrinsic RectifierE153432SGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C - 200 VSVDGR TJ = 25C to 150C, RGS = 1M -

 9.1. Size:170K  ixys
 ixtn110n20l2.pdf pdf_icon

IXTN120P20T

Advance Technical Information Linear L2TM Power VDSS = 200V IXTN110N20L2 MOSFET w/Extended ID25 = 100A 24m FBSOA RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C, RGS = 1M 200 VVGSS Co

 9.2. Size:126K  ixys
 ixtn102n65x2.pdf pdf_icon

IXTN120P20T

Advance Technical InformationX2-Class VDSS = 650VIXTN102N65X2Power MOSFET ID25 = 76A RDS(on) 30m N-Channel Enhancement ModeAvalanche RatedminiBLOCFast Intrinsic DiodeE153432SGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VSVGSS Continuous 30 VDVG

Datasheet: IXTP2N100A , IXTP270N04T4 , IXTP20N65XM , IXTP20N65X , IXTP180N055T , IXTP160N085T , IXTP12N65X2 , IXTN210P10T , SPP20N60C3 , IXTN102N65X2 , IXTM7N50A , IXTM7N50 , IXTM7N45A , IXTM7N45 , IXTM6N60A , IXTM6N60 , IXTM4N95A .

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