All MOSFET. IXTM7N45 Datasheet

 

IXTM7N45 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTM7N45
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO3

 IXTM7N45 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTM7N45 Datasheet (PDF)

 9.1. Size:579K  ixys
ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf

IXTM7N45
IXTM7N45

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 67N10100 V 67 A 25 mIXTH / IXTM 75N10100 V 75 A 20 mIXTT 75N10N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VTO-204 AE (IXTM)VGS Continuous 20 VVGSM Transient 30

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STD3N30L-1

 

 
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